High-frequency switching device and semiconductor device

1. A high-frequency switching device comprising:

a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, and a plurality of high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, wherein

each of said plurality of high-frequency switch circuit sections comprises a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, in said plurality of high-frequency switch circuit sections, that is, first and second high-frequency switch circuit sections operating reversely with each other, the first terminals of first resistor elements are connected to the intermediate connection points of the first plurality of field-effect transistors constituting said first high-frequency switch circuit section, the first terminals of second resistor elements are connected to the intermediate connection points of the second plurality of field-effect transistors constituting said second high-frequency switch circuit section, and the second terminals of said first resistor elements connected to said first high-frequency switch circuit section are connected to the second terminals of said second resistor elements connected to said second high-frequency switch circuit section.

2. A high-frequency switching device set forth in claim 1 , comprising a voltage inversion circuit and first and second control terminals to which the input/output signals of said voltage inversion circuit are applied, wherein either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors from either said first or second control terminal.

3. A high-frequency switching device comprising:

a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, a plurality of series high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, and a plurality of shunt high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals and ground terminals, wherein

each of said plurality of series high-frequency switch circuit sections and each of said plurality of shunt high-frequency switch circuit sections respectively comprise a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, in each of a plurality of series high-frequency switch circuit sections and each of a plurality of shunt high-frequency switch circuit sections, that is, first and second high-frequency switch circuit sections operating reversely with each other, the first terminals of first resistor elements are connected to the intermediate connection points of the first plurality of field-effect transistors constituting said first high-frequency switch circuit section, the first terminals of second resistor elements are connected to the intermediate connection points of the second plurality of field-effect transistors constituting said second high-frequency switch circuit section, and the second terminals of the first resistor elements connected to said first high-frequency switch circuit section are connected to the second terminals of said second resistor elements connected to said second high-frequency switch circuit section.

4. A high-frequency switching device set forth in claim 3 , comprising a voltage inversion circuit and first and second control terminals to which the input/output signals of said voltage inversion circuit are applied, wherein either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors from either said first or second control terminal.

5. A high-frequency switching device comprising:

a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, and a plurality of high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, wherein

each of said plurality of high-frequency switch circuit sections comprises a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, the first terminals of resistor elements are connected to the intermediate connection points of the plurality of field-effect transistors respectively constituting said plurality of high-frequency switch circuit sections, and the second terminals of said resistor elements are all connected commonly.

6. A high-frequency switching device set forth in claim 5 , comprising a voltage inversion circuit and first and second control terminals to which the input/output signals of said voltage inversion circuit are applied, wherein either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors from either said first or second control terminal.

7. A high-frequency switching device comprising:

a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, a plurality of series high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, and a plurality of shunt high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals and ground terminals, wherein

each of said plurality of series high-frequency switch circuit sections and each of said plurality of shunt high-frequency switch circuit sections respectively comprise a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, the first terminals of resistor elements are connected to the intermediate connection points of the plurality of field-effect transistors respectively constituting said plurality of series high-frequency switch circuit sections and said plurality of shunt high-frequency switch circuit sections, and the second terminals of said resistor elements are all connected commonly.

8. A high-frequency switching device set forth in claim 7 , comprising a voltage inversion circuit and first and second control terminals to which the input/output signals of said voltage inversion circuit are applied, wherein either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors from either said first or second control terminal.

9. A semiconductor device obtained by integrating, on a semiconductor substrate, a high-frequency switching device comprising a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, and a plurality of high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, wherein

each of said plurality of high-frequency switch circuit sections comprises a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, in said plurality of high-frequency switch circuit sections, that is, first and second high-frequency switch circuit sections operating reversely with each other, the first terminals of first resistor elements are connected to the intermediate connection points of the first plurality of field-effect transistors constituting said first high-frequency switch circuit section, the first terminals of second resistor elements are connected to the intermediate connection points of the second plurality of field-effect transistors constituting said second high-frequency switch circuit section, and the second terminals of said first resistor elements connected to said first high-frequency switch circuit section are connected to the second terminals of said second resistor elements connected to said second high-frequency switch circuit section.

10. A semiconductor device obtained by integrating, on a semiconductor substrate, a high-frequency switching device comprising a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, a plurality of series high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, and a plurality of shunt high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals and ground terminals, wherein

each of said plurality of series high-frequency switch circuit sections and each of said plurality of shunt high-frequency switch circuit sections respectively comprise a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, in each of a plurality of series high-frequency switch circuit sections and each of a plurality of shunt high-frequency switch circuit sections, that is, first and second high-frequency switch circuit sections operating reversely with each other, the first terminals of first resistor elements are connected to the intermediate connection points of the first plurality of field-effect transistors constituting said first high-frequency switch circuit section, the first terminals of second resistor elements are connected to the intermediate connection points of the second plurality of field-effect transistors constituting said second high-frequency switch circuit section, and the second terminals of the first resistor elements connected to said first high-frequency switch circuit section are connected to the second terminals of said second resistor elements connected to said second high-frequency switch circuit section.

11. A semiconductor device obtained by integrating, on a semiconductor substrate, a high-frequency switching device comprising a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, and a plurality of high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, wherein

each of said plurality of high-frequency switch circuit sections comprises a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, the first terminals of resistor elements are connected to the intermediate connection points of the plurality of field-effect transistors respectively constituting said plurality of high-frequency switch circuit sections, and the second terminals of said resistor elements are all connected commonly.

12. A semiconductor device obtained by integrating, on a semiconductor substrate, a high-frequency switching device comprising a plurality of high-frequency signal input/output terminals through which high-frequency signals are input/output, a plurality of series high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals, and a plurality of shunt high-frequency switch circuit sections disposed between said plurality of high-frequency signal input/output terminals and ground terminals, wherein

each of said plurality of series high-frequency switch circuit sections and each of said plurality of shunt high-frequency switch circuit sections respectively comprise a series connection circuit of a plurality of field-effect transistors, either a high-level voltage or a low-level voltage is applied to the gate terminals of said plurality of field-effect transistors, whereby ON and OFF states are attained, furthermore, the first terminals of resistor elements are connected to the intermediate connection points of the plurality of field-effect transistors respectively constituting said plurality of series high-frequency switch circuit sections and said plurality of shunt high-frequency switch circuit sections, and the second terminals of said resistor elements are all connected commonly.