Transistor, display device including the same, and manufacturing method thereof

1. A transistor comprising:

a wire formed on a substrate, the wire comprising a semiconductor core, a first cover enclosing a portion of the semiconductor core, and a second cover enclosing the first cover;

a first electrode formed on the second cover of the wire;

an insulating layer formed on the first electrode and having contact holes exposing both portions of the semiconductor core and portions of the substrate; and

a second electrode and a third electrode connected to the wire through the contact holes.

2. The transistor of claim 1 , wherein the insulating layer comprises organic material.

3. The transistor of claim 2 , wherein the insulating layer comprises acrylic copolymer.

4. The transistor of claim 1 , wherein the first cover comprises an insulator.

5. The transistor of claim 4 , wherein the first cover comprises silicon oxide or silicon nitride.

6. The transistor of claim 1 , wherein the second cover comprises a conductor.

7. The transistor of claim 6 , wherein the second cover comprises at least one of Al, Cr, Mo, Cu, Ti, and Ta.

8. The transistor of claim 1 , wherein the first electrode and the first and the second covers have substantially coinciding boundaries.

9. A display device comprising:

a substrate;

a wire formed on a substrate, the wire comprising a semiconductor core, an inner cover enclosing a portion of the semiconductor core, and an outer cover enclosing the inner cover;

a first electrode formed on the outer cover of the wire;

an insulating layer formed on the first electrode and having contact holes exposing both portions of the semiconductor core and portions of the substrate; and

a second electrode and a third electrode connected to the wire through the contact holes; and a pixel electrode connected to the third electrode.

10. The display device of claim 9 , the display device further comprising:

a common electrode facing the pixel electrode; and

a liquid crystal layer disposed between the pixel electrode and the common electrode.

11. A transistor comprising:

a first electrode, a second electrode, and a third electrode formed on a substrate;

a wire formed on the first electrode, the wire comprising a semiconductor core, a first cover enclosing the semiconductor core, and a second cover enclosing the first cover; and

a fixer formed on the first electrode and the wire, wherein portions of the semiconductor core are not covered with the fixer, and the portions are connected to the second and the third electrodes, respectively, wherein the semiconductor core of the wire passes through the second electrode and the third electrode.

12. The transistor of claim 11 , wherein the portions of the semiconductor core are opposite end portions that are not covered with the fixer.

13. The transistor of claim 11 , wherein at least one portion of the second and the third electrodes are disposed on the fixer.

14. The transistor of claim 11 , wherein the second and the third electrodes have boundaries contacting the semiconductor core.

15. The transistor of claim 11 , wherein the first cover comprises an insulator.

16. The transistor of claim 15 , wherein the first cover comprises silicon oxide or silicon nitride.

17. The transistor of claim 11 , wherein the second cover comprises a conductor.

18. The transistor of claim 17 , wherein the second cover comprises at least one of Al, Cr, Mo, Cu, Ti, and Ta.

19. The transistor of claim 11 , disposed in a display device comprising a pixel electrode connected to the third electrode.

20. The transistor of claim 19 , the display device further comprising:

a common electrode facing the pixel electrode; and

a liquid crystal layer disposed between the pixel electrode and the common electrode.