IP Library Granted Patent US 7,382,050
Granted Patent B2
US 7,382,050 · App. 11/405,060 · Granted Jun 3, 2008

Semiconductor device and method for producing the same

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Quick Facts
Patent No.
US 7,382,050
App. No.
11/405,060
Granted
Jun 3, 2008
Kind
B2
Abstract

A semiconductor device includes a tape carrier substrate having a flexible insulating film base, a plurality of conductor wirings provided on the film base, and wiring bumps respectively formed so as to cover an upper surface and both side surfaces of the conductor wirings, and a semiconductor chip mounted on the tape carrier substrate, wherein electrodes of the semiconductor chip are connected to the conductor wirings via the wiring bumps. Electrode bumps are formed on the electrodes of the semiconductor chip, the electrodes of the semiconductor chip are connected to the conductor wirings via a bonding between the wiring bumps and the electrode bumps, and the electrode bumps are harder than the wiring bumps. This structure can reduce bonding damages to the electrodes of the semiconductor chip caused by a process of connecting the electrodes and the conductor wirings via the bumps.

Claims (12)

1. A semiconductor device comprising:

a tape carrier substrate comprising

a flexible insulating film base,

a plurality of conductor wirings provided on the film base, and

wiring bumps respectively formed so as to cover an upper surface and both side surfaces of the conductor wirings; and

a semiconductor chip mounted on the tape carrier substrate;

wherein electrodes of the semiconductor chip are connected to the conductor wirings via the wiring bumps,

electrode bumps are formed on the electrodes of the semiconductor chip, and the electrodes of the semiconductor chip are connected to the conductor wirings via a bonding between the wiring bumps and the electrode bumps, and

the electrode bumps are harder than the wiring bumps.

2. The semiconductor device according to claim 1 , wherein the electrode bumps comprise a Ni layer and an Au layer that are layered sequentially.

3. The semiconductor device according to claim 1 , wherein the electrode bumps are smaller than the wiring bumps and buried in the wiring bumps.

4. The semiconductor device according to claim 1 , wherein the electrode bumps are at least as large as the wiring bumps, and the wiring bumps are deformed.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2020
From: PANASONIC CORPORATION
To: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 052755/0917 →
CHANGE OF NAME Recorded Nov 20, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021930/0876 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2006
From: MATSUMURA, KAZUHIKO; SHIMOISHIZAKA, NOZOMI
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 017995/0977 →