IP Library Granted Patent US 7,524,701
Granted Patent B2
US 7,524,701 · App. 11/405,801 · Granted Apr 28, 2009

Chip-scale package

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Quick Facts
Patent No.
US 7,524,701
App. No.
11/405,801
Granted
Apr 28, 2009
Kind
B2
Abstract

A method for manufacturing a semiconductor package that includes forming a frame inside a conductive can, the frame being unwettable by liquid solder.

Claims (21)

1. A process for manufacturing a semiconductor package, comprising:

forming a frame comprised of solder resist inside a conductive can to define a receiving area inside said can for receiving a semiconductor device, said frame being unwettable by solder in liquid phase;

providing a semiconductor device having a first power electrode on one surface thereof;

interposing a solder paste mass between said surface area and said first power electrode;

reflowing said solder mass; and

solidifying said solder mass, wherein said conductive can includes a web portion,and a wall surrounding said web portion , and wherein said frame is formed on said web portion between said wall and said receiving area, wherein said frame surrounds said receiving area.

2. The process of claim 1 , wherein said semiconductor device is a power semiconductor device.

3. The process of claim 1 , wherein said semiconductor device is a power MOSFET.

4. The process of claim 1 , wherein said semiconductor device is an IGBT.

5. The process of claim 1 , wherein said semiconductor device is a diode.

6. The process of claim 1 , wherein said frame is drop-on-demand deposited.

7. The process of claim 1 , wherein said frame is stencil printed.

8. The process of claim 1 , wherein said conductive can is comprised of copper.

9. The process of claim 1 , wherein said conductive can is plated with silver or gold.

10. The process of claim 1 , wherein said conductive can includes an exterior surface coated with a high thermal absorption dielectric.

11. The process of claim 10 , wherein said dielectric is a polymer.

12. The process of claim 10 , wherein said dielectric is a pigmented polymer.

13. The process of claim 1 , wherein said frame is comprised of a passivation material.

14. The process of claim 13 , wherein said passivation material is an oxide.

15. The process of claim 1 , further comprising drop-on-demand depositing a high thermal absorption dielectric on the exterior surface of said conductive can.

16. The process of claim 15 , wherein said thermal absorption dielectric is a high thermal conductivity polymer.

Assignments (2)
CHANGE OF NAME Recorded Jul 23, 2018
From: INTERNATIONAL RECTIFIER CORPORATION
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 046612/0968 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 18, 2006
From: STANDING, MARTIN; CLARKE, ROBERT J.
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 017790/0466 →