Schottky barrier diode and manufacturing method thereof
View Patent ↗To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a semiconductor layer of a first conductivity type, a first electrode which is a metal layer forming a Schottky contact with a main surface of the semiconductor layer, a second electrode forming an ohmic contact with an opposite main surface of the semiconductor layer, a buried layer of a second conductivity type formed within the semiconductor layer so as not to be in contact with the first electrode, where the second conductivity type has a different charge carrier from the first conductivity type, and a guard ring of the second conductivity type formed within the semiconductor layer so as to be in contact with the first electrode and also to surround the buried layer without contacting with the buried layer.
1. A manufacturing method of a Schottky barrier diode including (i) a first electrode which is a metal layer forming a Schottky contact with a first surface of a semiconductor layer of a first conductivity type and (ii) a second electrode forming an ohmic contact with a second surface of the semiconductor layer, the manufacturing method comprising:
a guard ring formation step of forming a ring-like guard ring of a second conductivity type within the semiconductor layer, so that a part of the guard ring is exposed on the first surface of the semiconductor layer, the second conductivity type having a different charge carrier from the first conductivity type;
a buried layer formation step of burying a first buried layer of the second conductivity type within the semiconductor layer so that a periphery of the first buried layer is surrounded by the guard ring without being in contact with the guard ring; and
a first electrode formation step of forming the first electrode so as to be in contact with the exposed part of the guard ring; wherein
in the guard ring formation step, the guard ring is formed so as to have a certain depth from the first surface of the semiconductor layer of the first conductivity type, and
in the buried layer formation step, the first buried layer is formed so as to have a depth that is substantially the same as the certain depth so that the first buried layer is surrounded by the guard ring.
2. The manufacturing method of claim 1 , wherein
in the buried layer formation step, a second buried layer of the second conductivity type is formed so as to surround the first buried layer with being in contact with the guard ring.
3. A manufacturing method of a Schottky barrier diode including (i) a first electrode which is a metal layer forming a Schottky contact with a first surface of a semiconductor layer of a first conductivity type and (ii) a second electrode forming an ohmic contact with a second surface of the semiconductor layer, the manufacturing method comprising:
a guard ring formation step of forming a ring-like guard ring of a second conductivity type within the semiconductor layer, so that a part of the guard ring is exposed on the first surface of the semiconductor layer, the second conductivity type having a different charge carrier from the first conductivity type;
a buried layer formation step of burying a first buried layer of the second conductivity type within the semiconductor layer so as to be surrounded by the guard ring without being in contact with the guard ring; and
a first electrode formation step of forming the first electrode so as to be in contact with the exposed part of the guard ring, wherein
in the guard ring formation step, the guard ring is formed so as to have a first predetermined depth from the first surface of the semiconductor layer of the first conductivity type, and
in the buried layer formation step, the first buried layer is formed so as to have a second predetermined depth that is shallower than the first predetermined depth so sides of the first buried layer are surrounded by the guard ring.