Solid state imaging device

1. A solid state imaging device comprising:

a plurality of photoelectric conversion elements which are arranged in a two-dimensional matrix on a semiconductor chip;

vertical transfer registers including a vertical transfer channel and vertical transfer electrodes, respectively, for transferring signal charge read out of the photoelectric conversion elements in the vertical direction;

a horizontal transfer register including a horizontal transfer channel and horizontal transfer electrodes for transferring the signal charge transferred from the vertical transfer registers in the horizontal direction;

bus interconnects which are electrically connected to the vertical transfer electrodes and the horizontal transfer electrodes; and

pads for external connection which are electrically connected to the bus interconnects, wherein

the pads are formed above the bus interconnects and the horizontal transfer electrodes.

2. The solid state imaging device according to claim 1 , wherein

the pads are located above the horizontal transfer channel.

3. The solid state imaging device according to claim 2 , wherein

the horizontal transfer electrodes are conductive layers and the pads are metal layers.

4. The solid state imaging device according to claim 3 , wherein

the conductive layers are made of polysilicon.

5. The solid state imaging device according to claim 1 , wherein

the pads are inclined from the main surface of the semiconductor chip.

6. The solid state imaging device according to claim 1 , wherein

the pads are electrically connected to the bus interconnects via contact plugs.

7. The solid state imaging device according to claim 1 , wherein

the photoelectric conversion elements, vertical transfer registers and horizontal transfer register provide a CCD image sensor.