Semiconductor device and method of manufacturing the same
View Patent ↗Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
1. A semiconductor device, comprising:
a wiring substrate;
a semiconductor chip flip-chip-bonded over the wiring substrate; and
a heat spreader adhered over a back surface of the semiconductor chip with heat radiation resin;
wherein
the heat radiation resin contains a filler and a spacer;
by setting a thickness of the heat radiation resin to A, and an average particle diameter of the spacer to C,
a relation of A× 9/10 ≧C is held; and
the average particle diameter of the spacer is larger than a maximum grain size of the filler.
2. A semiconductor device according to claim 1 , wherein
a maximum grain size of the spacer is larger than a maximum grain size of the filler.
3. A semiconductor device according to claim 1 , wherein
a minimum particle size of the spacer is larger than an average particle diameter of the filler.
4. A semiconductor device according to claim 1 , wherein
a minimum particle size of the spacer is larger than a particle diameter which occupies 90% of an occupying rate of the filler.
5. A semiconductor device according to claim 1 , wherein
a content in the heat radiation resin of the spacer is less than 10 volume %.
6. The semiconductor device according to claim 1 , wherein the spacer includes globular form zirconia.