Semiconductor device, a manufacturing method thereof, and a camera
View Patent ↗A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating film. The insulating film has a first thickness and a second thickness that is thinner than the first thickness. The insulating film has the first thickness below both ends of the transfer electrode in a width direction of the transfer channel that is orthogonal to a charge transfer direction through the transfer channel, and the insulating film has the second thickness on a part including a center of the transfer channel in the width direction.
1. A solid-state image sensor comprising:
a semiconductor substrate having a photoelectric conversion region;
an insulating film formed on said semiconductor substrate;
an electrode formed on said insulating film, said electrode for reading signal charge from said photoelectric conversion region by applying voltage via said insulating film; and
a light shielding film located over said electrode and a part of said photoelectric conversion region, wherein
a part of said insulating film located above said photoelectric conversion region has a first thickness,
a part of said insulating film located below said electrode has a second thickness,
the part of said insulating film having the first thickness includes at least a silicon oxide film and a second insulating film located on the silicon oxide film, and
a thickness of the second insulating film is greater than a thickness of the silicon oxide film.
2. The solid-state image sensor according to claim 1 ,
wherein a part of said electrode is located over a part of said photoelectric conversion region.
3. The solid-state image sensor according to claim 1 ,
wherein said silicon oxide film does not form a Bird's Beak.
4. The solid-state image sensor according to claim 1 ,
wherein the part of said insulating film having the second thickness is made of silicon oxide and silicon nitride.
5. The solid-state image sensor according to claim 1 ,
wherein the second insulating film is a silicon nitride film.
6. A camera comprising a solid-state image sensor,
wherein said solid-state image sensor includes:
a semiconductor substrate having a photoelectric conversion region;
an insulating film formed on said semiconductor substrate;
an electrode formed on said insulating film, said electrode for reading signal charge from said photoelectric conversion region by applying voltage via said insulating film; and
a light shielding film located over said electrode and a part of said photoelectric conversion region, and wherein
a part of said insulating film located above said photoelectric conversion region has a first thickness,
a part of said insulating film located below said electrode has a second thickness,
the part of said insulating film having the first thickness includes at least a silicon oxide film and a second insulating film located on the silicon oxide film, and
a thickness of the second insulating film is greater than a thickness of the silicon oxide film.
7. The camera according to claim 6 ,
wherein a part of said electrode is located over a part of said photoelectric conversion region.
8. The camera according to claim 6 ,
wherein said silicon oxide film does not form a Bird's Beak.
9. The camera according to claim 6 ,
wherein the part of said insulating film having the second thickness is made of silicon oxide and silicon nitride.
10. The camera according to claim 6 ,
wherein the second insulating film is a silicon nitride film.