Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer
A semiconductor laser element includes: a stack of layers having resonator facets; and at least one protection layer formed on at least one of the resonator facets. Each of the at least one protection layer includes at least first, second, and third sublayers. The first sublayer is formed nearest to the stack among the at least first, second, and third sublayers, and made of a material not containing oxygen (or nitrogen) as a constituent element. The second sublayer is made of an oxide (or nitride) produced by oxidizing (or nitriding) a portion of the first sublayer. The third sublayer is formed farthest from the stack among the at least first, second, and third sublayers, and made of an oxide (or nitride). The thickness d 2 of the second sublayer and the total thickness d 1 of the first and second sublayers satisfy a relationship, 0.1≦d 2 /d 1 ≦0.9.
1 - 4 . (canceled)
5 . A semiconductor laser element comprising:
a stack of a plurality of layers having cleaved faces which are perpendicular to a light propagation direction and function as resonator faces; and
at least one protection layer formed on at least one of said cleaved faces;
wherein each of said at least one protection layer includes at least first, second, and third sublayers,
said first sublayer is formed nearest to said stack among said at least first, second, and third sublayers, and made of a material which does not contain nitrogen as a constituent element,
said second sublayer which is made of a nitride produced by nitriding a portion of said first sublayer, and has a thickness d 2 ,
said third sublayer is formed farthest from said stack among said at least first, second, and third sublayers, and made of a nitride,
said first and second sublayers have a total thickness d 1 , and
said total thickness d 1 and said thickness d 2 of said second sublayer satisfy a relationship, 0.1≦d 2 /d 1 ≦0.9.
6 . A semiconductor laser element according to claim 5 , wherein said first sublayer is made of at least one of Al, Ga, Si, Ge, Ta, and Ti.
7 . A semiconductor laser element according to claim 5 , wherein said third sublayer is made of a nitride of at least one of Al, Ga, Si, Ge, Ta, and Ti.
8 . A semiconductor laser element according to claim 6 , wherein said third sublayer is made of a nitride of at least one of Al, Ga, Si, Ge, Ta, and Ti.