Multi-directional light scattering LED and manufacturing method thereof
View Patent ↗A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
1. A multidirectional light scattering light emitting diode comprising:
a substrate;
a first semiconductor layer disposed over the substrate;
a light emitting layer over the first semiconductor layer;
a second semiconductor layer over the light emitting layer;
a transparent conductive layer disposed over part of the second semiconductor layer;
a scattering layer with scattering surface arranged over the first semiconductor layer;
a first electrode disposed on the scattering layer; and
a second electrode arranged over part of the second semiconductor layer and part of the transparent conductive layer.
2. The device as claimed in claim 1 , wherein the substrate is an insulated substrate.
3. The device as claimed in claim 1 , wherein the substrate is made from sapphire, silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), lithium aluminum oxide (LiAlO2), Lithium Gallium Oxide(LiGaO2), or Aluminum Nitride(AlN).
4. The device as claimed in claim 1 , wherein the scattering layer is formed by removing material from a combination of two or three of the following: the first semiconductor layer, the light emitting layer and the second semiconductor layer, said scattering layer thereby being disposed over the first semiconductor layer.
5. The device as claimed in claim 1 , wherein the scattering layer is a first semiconductor layer.
6. The device as claimed in claim 1 , wherein a refractive layer is disposed between the second semiconductor layer and the transparent conductive layer.
7. The device as claimed in claim 6 , wherein the refractive layer is a metal oxide layer.
8. The device as claimed in claim 7 , wherein the metal oxide layer is made from titanium dioxide (TiO2).
9. The device as claimed in claim 7 , wherein the metal oxide layer is irregularly disposed on surface of the second semiconductor layer.
10. The device as claimed in claim 1 , wherein the transparent conductive layer is made from indium tin oxide (ITO).
11. The device as claimed in claim 1 , wherein the first semiconductor layer is a n-type gallium nitride semiconductor layer.
12. The device as claimed in claim 1 , wherein the second semiconductor layer is a p-type gallium nitride semiconductor layer.
13. The device as claimed in claim 1 , wherein the scattering layer is columnar structure.
14. The device as claimed in claim 1 , wherein the scattering layer is needle-shape structure.