Optical device, surface emitting type device and method for manufacturing the same
View Patent ↗The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.
1. A method for manufacturing an optical device comprising a reflector for reflecting light, said reflector is formed by steps comprising:
forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride semiconductor, are alternately laminated; and
heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form gaps between neighboring ones of said semiconductor layers.
2. A method for manufacturing an optical device according to claim 1 , wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.
3. A method for manufacturing an optical device according to claim 1 , wherein said first nitride semiconductor is Al x Ga 1-x N (0≦x≦1) and wherein said second nitride semiconductor is Al y Ga 1-y N (0≦y<x) or In z Ga 1-z N (0≦z≦1).
4. A method for manufacturing an optical device comprising a reflector for reflecting light, said reflector is formed by steps comprising:
forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride, are alternately laminated;
heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form gaps between neighboring ones of semiconductor layers; and
forming organic layers in said gaps.
5. A method for manufacturing an optical device according to claim 4 , wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.
6. A method for manufacturing an optical device according to claim 4 , wherein said first nitride semiconductor is Al x Ga 1-x N (0≦x≦1) and wherein said second nitride semiconductor is Al y Ga 1-y N (0≦y<x) or In z Ga 1-z N (0≦z≦1).
7. A method for manufacturing a surface emitting type device in which a first reflector for reflecting light from an active layer of said surface emitting type device and a second reflector for reflecting light from said active layer are disposed to sandwich said active layer, at least one of said first reflector and said second reflector is formed by steps comprising:
forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride semiconductor, are alternately laminated; and
heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form gaps between neighboring ones of semiconductor layers.
8. A method for manufacturing an optical device according to claim 7 , wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.
9. A method for manufacturing a surface emitting type device according to claim 7 , wherein said first nitride semiconductor is Al x Ga 1-x N (0≦x≦1) and wherein said second nitride semiconductor is Al y Ga 1-y N (0≦y<x) or In z Ga 1-z N (0≦z≦1).
10. A method for manufacturing a surface emitting type device in which a first reflector for reflecting light from an active layer of said surface emitting type device and a second reflector for reflecting light from said active layer are disposed to sandwich said active layer, at least one of said first reflector and said second reflector is formed by steps comprising:
forming laminated layers in which a plurality of semiconductor layers, each of which is made of a first nitride semiconductor containing aluminum, and a plurality of etching layers, each of which is made of a second nitride semiconductor having a lower content of aluminum than said first nitride semiconductor, are alternatively laminated;
heating said laminated layers in an atmosphere containing hydrogen to etch said plurality of etching layers exposed to the end face of said laminated layers to thereby form a gap between neighboring semiconductor layers; and
forming organic layers in said gaps.
11. A method for manufacturing an optical device according to claim 7 , wherein said atmosphere containing hydrogen is a mixed gas of hydrogen gas and at least one gas selected from the group consisting of nitrogen, ammonia, helium, argon, xenon, and neon, or a gas substantially consisting of hydrogen gas.
12. A method for manufacturing a surface emitting type device according to claim 10 , wherein said first nitride semiconductor is Al x Ga 1-x N (0≦x≦1) and wherein said second nitride semiconductor is Al y Ga 1-y N (0≦y<x) or In z Ga 1-z N (0≦z≦1).