Method of manufacturing semiconductor device
View Patent ↗Method for manufacturing a semiconductor device, includes: forming a layer of dicobalt monosilicide (Co 2 Si) or of cobalt (Co) on a device-forming surface of a silicon substrate in a sputter apparatus, by utilizing a predetermined temperature profile; elevating a temperature of the silicon substrate to a predetermined temperature T 2 , which is equal to or higher than 600° C., conducted after forming the layer of Co or Co 2 Si; and forming a layer of monocobalt monosilicide (CoSi) on the device-forming surface of the silicon substrate at a temperature equal to or higher than T 2 , conducted after heating the silicon substrate to T 2 , wherein, the silicon substrate is elevated to a temperature between a highest reachable temperature T 1 of the silicon substrate during forming the layer of Co or Co 2 Si and the temperature T 2 at a temperature ramp rate of equal to or higher than 50° C./sec.
1. A method for manufacturing a semiconductor device, comprising:
forming a layer of cobalt (Co) or a layer of dicobalt monosilicide (Co2Si) on a device-forming surface of a silicon substrate in a sputter apparatus, by utilizing a predetermined temperature profile;
after said forming the layer of Co or Co2Si, elevating a temperature of said silicon substrate to a predetermined temperature T 2 , which is equal to or higher than 600 degree C.; and
after said elevating the temperature of the silicon substrate to T 2 , forming a layer of monocobalt monosilicide (CoSi) on said device-forming surface of said silicon substrate at a temperature within a range of equal to or higher than T 2 ,
wherein, in said elevating the temperature of said silicon substrate to T 2 , within a temperature range between a highest reachable temperature T 1 of said silicon substrate in said forming the layer of Co or Co2Si and said temperature T 2 , a temperature of said silicon substrate is elevated at a temperature ramp rate of equal to or higher than 50 degree C./sec.
2. The method for manufacturing the semiconductor device according to claim 1 ,
wherein both of said elevating the temperature of said silicon substrate to T 2 and said forming the layer of CoSi are conducted within a lamp annealing apparatus.
3. The method for manufacturing the semiconductor device according to claim 1 ,
wherein said forming the layer of Co or Co2Si includes depositing Co on said device-forming surface of said silicon substrate at a temperature of not lower than (T 1 −50) (degree C.) and not higher than T 1 (degree C.).
4. The method for manufacturing the semiconductor device according to claim 1 ,
wherein said forming the layer of Co or Co or Co2Si includes:
depositing Co on said device-forming surface of said silicon substrate at a predetermined temperature of lower than T 1 to form said layer of Co; and
elevating the temperature of said silicon substrate having said layer of Co deposited on said silicon substrate to the temperature T 1 to form said layer of Co or Co2Si.
5. The method for manufacturing the semiconductor device according to claim 1 , wherein said elevating the temperature of said silicon substrate to T 2 comprises:
elevating the temperature of said silicon substrate to a predetermined temperature T 3 , which is lower than T 1 ; holding the temperature of said silicon substrate to be at a temperature T 3 ; and
after said holding the temperature of said silicon substrate to the temperature T 3 , elevating the temperature of said silicon substrate within a temperature range between T 2 and T 3 at a temperature ramp rate of equal to or higher than 50 degree C./sec.
6. The method for manufacturing the semiconductor device according to claim 1 ,
wherein, in said elevating the temperature of said silicon substrate to the temperature T 2 , the temperature of said silicon substrate is elevated within a temperature range between 400 degree C. and 600 degree C., both ends inclusive, at a temperature ramp rate of equal to or higher than 50 degree C./sec.
7. The method for manufacturing the semiconductor device according to claim 1 , further comprising:
after said forming the layer of CoSi, removing unreacted Co; and
after said removing unreacted Co, elevating the temperature of said silicon substrate to a temperature T 4 , which is higher than T 2 , to form a layer of monocobalt disilicide (CoSi2) on said device-forming surface.
8. The method for manufacturing the semiconductor device according to claim 7 ,
wherein, after conducting said forming the layer of CoSi, said silicon substrate is exposed to an atmospheric air at a temperature of equal to or lower than 350 degree C., and then, said removing unreacted Co is conducted.