Nonvolatile semiconductor memory and method for controlling the same
View Patent ↗A nonvolatile semiconductor memory includes a memory cell array, a flag information storage that stores a write flag indicating success/failure of writing in association with each address of a plurality of data segments contained in the data block, an internal address storage that selects the address where the writing has failed, a write circuit that performs data writing, a comparator that performs verify operation to verify success/failure of the data writing, and a sequence controller that updates a write flag according to the result of the verify operation.
1. A nonvolatile semiconductor memory that performs
write/erase operation in units of data block containing a plurality of data segments, comprising:
a memory cell array including a plurality of nonvolatile memory cells;
a flag storage storing a flag provided for each address and indicating success/failure of the write/erase operation in association with each address of the plurality of data segments contained in the data block;
an address selector selecting the address where the write/erase operation has failed according to the stored flag;
a writing/erasing section performing the write/erase operation of the data segments on the nonvolatile memory cell located in the selected address;
a verify section performing verify operation to verify success/failure of the data write/erase operation on the nonvolatile memory cell located in the selected address; and
a flag update section updating the flag according to a result of the verify operation,
wherein the address selector includes a next execution address calculator that checks a plurality of flags stored in the flag storage at substantially the same time in each data write/erase operation or verify operation and selects an address of a set flag from the plurality of flags,
and wherein the next execution address calculator includes a first and a second next execution address calculator and a first determinator determining one from addresses selected by the first and the second next execution address calculators, the first next execution address calculator checking a plurality of flags corresponding to addresses of a first range and the second next execution address calculator checking a plurality of flags corresponding to addresses of a second range.
2. A nonvolatile semiconductor memory that performs
write/erase operation in units of data block containing a plurality of data segments, comprising:
a memory cell array including a plurality of nonvolatile memory cells;
a flag storage storing a flag provided for each address and indicating success/failure of the write/erase operation in association with each address of the plurality of data segments contained in the data block;
an address selector selecting the address where the write/erase operation has failed according to the stored flag;
a writing/erasing section performing the write/erase operation of the data segments on the nonvolatile memory cell located in the selected address;
a verify section performing verify operation to verify success/failure of the data write/erase operation on the nonvolatile memory cell located in the selected address; and
a flag update section updating the flag according to a result of the verify operation,
wherein the address selector includes a next execution address calculator that checks a plurality of flags stored in the flag storage at substantially the same time in each data write/erase operation or verify operation and selects an address of a set flag from the plurality of flags, and
wherein the address selector further includes a last address calculator that checks a plurality of flags stored in the flag storage at substantially the same time upon selection of the address and determines completion of the data write/erase operation or the verify operation when all of the plurality of flags are not set.
3. The nonvolatile semiconductor memory according to claim 2 , wherein the last address calculator checks a plurality of flags corresponding to addresses larger than a currently selected address.
4. The nonvolatile semiconductor memory according to claim 2 , wherein the last address calculator includes a first and a second last address calculator and a determinator determining completion of the data write/erase operation or the verify operation based on one selected from determinations by the first and the second last address calculators, the first last address calculator checking a plurality of flags corresponding to addresses of a first range and the second last address calculator checking a plurality of flags corresponding to addresses of a second range.