Circuit with improved electrostatic discharge susceptibility
View Patent ↗An RFID tag includes a capacitor between the ASIC ground pin and the circuit ground. The value of the capacitor is selected so that in the case of electrostatic discharge (ESD), the potential drop is primarily across the capacitor rather than the ASIC. Thus, the ASIC is protected against ESD.
1. An electronic device designed for resistance against electrostatic discharge, the electronic device comprising:
a dielectric case;
an integrated circuit within the dielectric case and comprising a ground pin;
a circuit ground within the dielectric case; and
the integrated circuit having a single electrical connection to the circuit ground through said integrated circuit ground pin, said connection consisting of a capacitor.
2. The electronic device of claim 1 , wherein the integrated circuit comprises an application-specific integrated circuit.
3. The electronic device of claim 1 , wherein the integrated circuit comprises an RFID transponder circuit.
4. The electronic device of claim 1 , wherein the integrated circuit has a voltage threshold, and wherein the capacitor has a capacitance value selected such that a voltage drop across the integrated circuit caused by the electrostatic discharge is reduced to less than the voltage threshold.
5. A method for designing and fabricating an electronic device designed for resistance against electrostatic discharge, the electronic device comprising a dielectric case, an integrated circuit within the dielectric case comprising a ground pin, a circuit ground within the dielectric case, and the integrated circuit having a single electrical connection to the circuit ground through said integrated circuit ground pin, said connection consisting of a capacitor, the method comprising:
(a) determining characteristics of the electrostatic discharge;
(b) selecting a capacitance value for the capacitor in accordance with the characteristics of the electrostatic discharge such that a voltage drop across the integrated circuit caused by the electrostatic discharge is reduced to less than the voltage threshold; and
(c) fabricating the electronic device so that said capacitor is the single electrical connection between the circuit ground and the integrated circuit.
6. The method of claim 5 , wherein the characteristics comprise the operating frequency, the ESD main frequency component, and ASIC impedances at the ESD and the operating conditions.