Increased polysilicon deposition in a CVD reactor
View Patent ↗A method and process for the production of bulk polysilicon by chemical vapor deposition (CVD) where conventional silicon “slim rods” commonly used in Siemens-type reactors are replaced with shaped silicon filaments of similar electrical properties but larger surface areas, such as silicon tubes, ribbons, and other shaped cross sections. Silicon containing gases, such as chlorosilane or silane, are decomposed and form a silicon deposit on the hot surfaces of the filaments The larger starting surface areas of these filaments ensures a higher production rate without changing the reactor size, and without increasing the number and length of the filaments. Existing reactors need only the adaptation or replacement of filament supports to use the new filaments. The filaments are grown from silicon melt by Edge-defined, Film-fed Growth (EFG) method. This also enables the doping of the filaments and simplification of power supplies for new reactors.
1. A high surface area silicon filament configured for bulk deposition thereupon of polysilicon in a CVD reactor, the CVD reactor including a power supply adjusted and configured for deposition of polysilicon onto a solid, cylindrical, 7 mm diameter silicon slim rod, said slim rod having a specified slim rod length and a specified slim rod surface area, wherein:
the filament has a filament length that is approximately equal to the specified slim rod length;
and the high surface area silicon filament has a surface area greater than the slim rod surface area, while also being usable in the CVD reactor in place of the slim rod without adjusting, reconfiguring, or replacing the power supply of the CVD reactor.
2. The high surface area silicon filament of claim 1 , wherein the high surface area silicon filament has a wall thickness that is axially uniform throughout the silicon filament to within a tolerance of 10%.
3. The high surface area silicon filament of claim 1 , wherein the high surface area silicon filament includes an annular tube section having an outer diameter of at least 20 mm and a ratio of tube wall thickness to outer diameter of not greater than ¼.
4. The high surface area silicon filament of claim 1 , wherein the high surface area silicon filament comprises two vertical filament segments electrically connected by a bridge segment.
5. The high surface area silicon filament of claim 1 , wherein the high surface area silicon filament includes a horizontal tubular filament bridge segment.
6. The high surface area silicon filament of claim 1 , wherein the high surface area silicon filament has an annular cross section having an outer diameter and a wall thickness, and the high surface area silicon filament satisfies the formula
4( d o −δ)δ≧ d o d slim ,
where
d o is the outer diameter of the high surface area silicon filament,
δ is the wall thickness of the high surface area silicon filament, and
d slim is a diameter of the slim rod.
7. A CVD reactor for bulk production of polysilicon, said CVD reactor being configured for depositing polysilicon onto a solid, cylindrical, 7 mm diameter silicon slim rod having a specified slim rod length and a specified slim rod surface area, the CVD reactor comprising:
a base plate system including filament supports;
an enclosure attachable to said base plate system so as to form a deposition chamber;
a power supply adjusted and configured for use with the cylindrical slim rod filament;
electrical feedthroughs in said base plate system, said electrical feedthroughs being adapted for connection of the power supply to both ends of a high surface area silicon filament;
a gas inlet in said base plate system connectible to a source of silicon-containing gas;
a gas outlet in said base plate system whereby gas may be released from said chamber; and
wherein
said high surface area silicon filament has a total surface area that is at least four times greater than a total surface area of said slim rod;
said high surface area silicon filament has a filament length that is approximately equal to the specified slim rod length; and
said high surface area silicon filament is usable in the CVD reactor without adjusting, reconfiguring, or replacing the power supply of the CVD reactor.
8. The CVD reactor of claim 7 , wherein the high surface area silicon filament has a wall thickness that is axially uniform throughout the silicon filament to within a tolerance of 10%.
9. The CVD reactor of claim 7 , wherein the high surface area silicon filament includes an annular tube section having an outer diameter of at least 20 mm and a ratio of tube wall thickness to outer diameter of not greater than ¼.
10. The CVD reactor of claim 7 , wherein the high surface area silicon filament comprises two vertical filament segments electrically connected by a bridge segment.
11. The CVD reactor of claim 7 , wherein the high surface area silicon filament includes a horizontal tubular filament bridge segment.
12. The CVD reactor of claim 7 , wherein the high surface area silicon filament has an annular cross section having an outer diameter and a wall thickness, and the silicon filament satisfies the formula
4( d o −δ)δ≧ d o d slim ,
where
d o is the outer diameter of the high surface area silicon filament,
δ is the wall thickness of the high surface area silicon filament, and
d slim is a diameter of the slim rod.