Active mask lithography

1. A lithographic mask, comprising:

a patterned energy emitting layer, the layer comprising

at least one active region that emits an energy flux at a selected level in response to an electrical input; and

at least one inactive region that does not emit an energy flux at the selected level in response to the electrical input.

2. The mask of claim 1 , wherein the energy flux is electromagnetic radiation.

3. The mask of claim 1 , wherein the energy flux is electrons.

4. The mask of claim 1 , wherein the energy flux is an evanescent wave.

5. The mask of claim 1 , wherein the energy flux is an electromagnetic field.

6. The mask of claim 5 , wherein the electromagnetic field is static.

7. The mask of claim 5 , wherein the electromagnetic field is dynamic.

8. The mask of claim 5 , wherein the electromagnetic field is purely electric.

9. The mask of claim 5 , wherein the electromagnetic field is purely magnetic.

10. The mask of claim 1 , wherein the patterned energy emitting layer comprises a light emitting diode.

11. The mask of claim 1 , wherein the patterned energy emitting layer comprises an electrode.

12. A lithographic mask, comprising:

a patterned energy emitting layer, the layer comprising

at least one active region that emits an energy flux at a selected level in response to an optical input having an input frequency, wherein the energy flux has an output frequency that is not greater than the input frequency; and

at least one inactive region that does not emit an energy flux at the selected level in response to the optical input.

13. The mask of claim 12 , wherein the energy flux is electromagnetic radiation.

14. The mask of claim 12 , wherein the energy flux is an electromagnetic field.

15. The mask of claim 12 , wherein the patterned energy emitting layer comprises a fluorescent material, and wherein the energy flux is emitted by fluorescence of the fluorescent material.

16. The mask of claim 15 , wherein the fluorescent material comprises a phosphor.

17. The mask of claim 15 , wherein the fluorescent material comprises a quantum dot.

18. The mask of claim 15 , wherein the fluorescent material comprises a nonlinear optical material.

19. A lithographic apparatus, comprising:

a patterned energy emitting layer, the layer comprising at least one active region that emits an energy flux and at least one inactive region that does not emit an energy flux; and

a substrate support arranged to hold a substrate in a position to receive the energy flux.

20. The apparatus of claim 19 , further comprising a beam-directing element that directs the energy flux toward the substrate.

21. The apparatus of claim 19 , wherein the energy flux is electromagnetic radiation.

22. The apparatus of claim 19 , wherein the energy flux is electrons.

23. The apparatus of claim 19 , wherein the energy flux is an evanescent wave.

24. The apparatus of claim 19 , wherein the energy flux is an electromagnetic field.

25. The apparatus of claim 24 , wherein the electromagnetic field is static.

26. The apparatus of claim 24 , wherein the electromagnetic field is dynamic.

27. The apparatus of claim 24 , wherein the electromagnetic field is purely electric.

28. The apparatus of claim 24 , wherein the electromagnetic field is purely magnetic.

29. The apparatus of claim 19 , wherein the patterned energy emitting layer comprises a light emitting diode.

30. The apparatus of claim 19 , wherein the patterned energy emitting layer comprises a fluorescent material.

31. The apparatus of claim 19 , wherein the patterned energy emitting layer comprises an electrode.

32. The apparatus of claim 19 , wherein the patterned energy emitting layer comprises an input configured to trigger emission of the energy flux.

33. The apparatus of claim 32 , wherein the input is configured to trigger emission in response to an optical signal.

34. The apparatus of claim 32 , wherein the input is configured to trigger emission in response to an electrical signal.

35. A lithographic method, comprising:

generating an energy flux by activating a patterned energy emitting layer, wherein the layer comprises at least one active region that emits an energy flux and at least one inactive region that does not emit an energy flux; and

exposing a flux sensitive material to the generated energy flux at a level selected to modify the flux sensitive material.

36. The lithographic method of claim 35 , wherein the generated energy flux is electromagnetic radiation.

37. The lithographic method of claim 35 , wherein the generated energy flux is electrons.

38. The lithographic method of claim 35 , wherein the generated energy flux is an evanescent wave.

39. The lithographic method of claim 35 , wherein generating an energy flux by activating a patterned energy emitting layer includes generating an electromagnetic field.

40. The lithographic method of claim 39 , wherein the generating an electromagnetic field includes generating a static electromagnetic field.

41. The lithographic method of claim 39 , wherein generating an electromagnetic field includes generating a dynamic electromagnetic field.

42. The lithographic method of claim 39 , wherein generating an electromagnetic field includes generating substantially only an electric field.

43. The lithographic method of claim 39 , wherein generating an electromagnetic field includes generating substantially only a magnetic field.

44. The lithographic method of claim 35 , wherein activating a patterned energy emitting layer comprises activating one or more light-emitting diodes.

45. The lithographic method of claim 35 , wherein the patterned energy emitting layer comprises a fluorescent material.

46. The lithographic method of claim 45 , wherein activating the patterned energy emitting layer comprises inducing fluorescence in the fluorescent material.

47. The lithographic method of claim 46 , wherein inducing fluorescence in the fluorescent material comprises exposing the fluorescent material to electromagnetic radiation.

48. The lithographic method of claim 46 , wherein inducing fluorescence in the fluorescent material comprises applying an electric field to the fluorescent material.

49. The lithographic method of claim 35 , wherein the patterned energy emitting layer comprises an electrode.

50. The lithographic method of claim 49 , wherein activating the patterned energy emitting layer comprises applying a voltage to the electrode.

51. The lithographic method of claim 50 , wherein the electrode is in contact with the substrate during application of the voltage.

52. The lithographic method of claim 50 , wherein the flux sensitive material includes a lipid bilayer, and wherein exposing the flux sensitive material to the generated energy flux includes forming pores in the lipid bilayer.

53. The lithographic method of claim 52 , further comprising applying an etchant to the lipid bilayer after forming the pores.

54. The lithographic method of claim 35 , wherein the flux sensitive material comprises a resist coating, and wherein exposing the flux sensitive material to the generated energy flux includes inducing a chemical change in the resist coating.

55. The lithographic method of claim 35 , wherein the exposed flux sensitive material is modified in a pattern corresponding to the pattern of the patterned energy emitting layer.