IP Library Granted Patent US 7,455,423
Granted Patent B2
US 7,455,423 · App. 11/414,047 · Granted Nov 25, 2008

Semiconductor light emitting device

Assignee: Sharp Kabushiki Kaisha
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Quick Facts
Patent No.
US 7,455,423
App. No.
11/414,047
Granted
Nov 25, 2008
Kind
B2
Abstract

A semiconductor light emitting device of the present invention includes four elements provided on a substrate and having different light emitting colors of red, green, blue, and white, respectively; a resin covering each of the elements; and a reflector provided to surround a circumference of the resin. With this structure, a semiconductor light emitting device having high brightness and excellent color rendering properties can be provided.

Claims (14)

1. A semiconductor light emitting device, comprising:

a substrate;

a white light emitting portion comprising a light emitting element provided on said substrate and emitting at least one of a blue or ultraviolet light and a first resin comprising a fluorescent substance arranged to cover the light emitting element;

three additional elements provided on said substrate and emitting light in colors of red, green, and blue, respectively;

a second resin covering each of said additional elements; and

a reflector provided to surround a circumference of the second resin,

wherein the white light emitting portion is placed on a placement surface of the substrate at a lower stage than the three additional elements or is shielded by the reflector, such that light from the element emitting blue light is prevented from entering the white light emitting portion.

2. The semiconductor light emitting device according to claim 1 , wherein a reflecting surface of said reflector is subjected to metal plating or metal vapor deposition.

3. The semiconductor light emitting device according to claim 1 , wherein the reflector is formed to surround each of said four elements.

4. The semiconductor light emitting device according to claim 1 , wherein said reflector is formed to surround said elements respectively emitting red, blue, and green light as one group, and surround said white light emitting portion as another group.

5. The semiconductor light emitting device according to claim 1 , wherein said substrate includes the placement surface on which said elements are placed, the placement surface having a two-stage structure, and said white light emitting portion is placed on a stage different from a stage on which said elements respectively emitting red, blue, and green light are placed.

6. The semiconductor light emitting device according to claim 1 , wherein said substrate includes the placement surface on which said elements are placed, the placement surface having a two-stage structure, and said elements respectively emitting blue and green light are placed on a stage different from a stage on which said elements red light and said white light emitting portion are placed.

7. The semiconductor light emitting device according to claim 1 , wherein said white light emitting portion is placed at a center of said substrate, and said elements respectively emitting red, blue, and green light are placed to surround the white light emitting portion.

8. The semiconductor light emitting device according to claim 7 , wherein said elements respectively emitting red, blue, and green light are placed at positions of apexes of a substantially regular triangle.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 26, 2018
From: SHARP KABUSHIKI KAISHA
To: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
Reel/Frame 047331/0728 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2006
From: TAKENAKA, YASUJI
To: SHARP KABUSHIKI KAISHA
Reel/Frame 017841/0285 →
Priority Claims (1)
JP 2005-132334 · Apr 28, 2005 · national
Continuity (1)
Related Publication 20060245188A1 · Nov 2, 2006