Semiconductor device for RF switching
View Patent ↗A semiconductor switch according to an embodiment of the invention includes resistive members connected with a source and a drain witch are n-type diffusion layers formed in a P-well of an n-type MOSFET. When a gate of the n-type MOFET is turned off, a positive voltage is applied to a node between the resistive members for a reverse bias at a PN junction between the source and the drain, and the well. When the gate is turned on, the node between the resistive members is set to 0 V.
1. A semiconductor device, comprising:
a source and drain of a first conductivity type formed in a well of a second conductivity type;
a gate formed between the source and the drain through a gate oxide film; and
a control unit for applying a reverse bias to portions between the source and the well and the drain and the well when the gate is turned off and for applying, when the gate is turned on, a substantially zero differential bias to the portions between the source and the well and between the drain and the well.
2. The semiconductor device according to claim 1 , wherein the control unit includes resistive members connected with the source and the drain, and when the gate is turned on, a potential at a node between the resistive members is set to 0 V, and when the gate is turned off, the reverse bias is applied to the node between the resistive members.
3. The semiconductor device according to claim 2 , wherein the control unit includes:
a gate control terminal for inputting a gate control signal for controlling on/off states of the gate; and
an impedance control terminal for inputting an impedance control signal applied to the node between the resistive members.
4. The semiconductor device according to claim 2 , wherein the control unit includes:
a gate control terminal for inputting a gate control signal for controlling on/off states of the gate; and
an inverter connected with the gate control terminal, and
an impedance control signal applied to the node between the resistive members is used as the gate control signal applied through the inverter.
5. The semiconductor device according to claim 2 , wherein an impedance of the resistive members is higher than an impedance through said source and drain at a time of turning the gate off.
6. The semiconductor device according to claim 1 , wherein the semiconductor device comprises an enhancement type MOSFET, and functions as an RF switch.
7. A semiconductor device, comprising:
a switching transistor having a source and drain of a first conductivity type formed in a well of a second conductivity type; and
a shunt transistor having a source and drain of a third conductivity type formed in a well of a fourth conductivity type,
wherein the switching transistor outputs an input signal by turning a gate on, and
the shunt transistor is connected with an output side of the switching transistor, and when a gate of the switching transistor is turned on, a gate of the shunt transistor is turned off, and, when the gate of the shunt transistor is turned off, a reverse bias is applied to portions between the source and the well and the drain and the well and, when the gate of the shunt transistor is turned on, a substantially zero differential bias is applied to the portions between the source and the well and between the drain and the well.
8. The semiconductor device according to claim 7 , further comprising first resistive members connected with the source and the drain of the shunt transistor,
wherein when the gate of the switching transistor is turned on, the reverse bias is applied to a first node between the first resistive members connected with the source and the drain of the shunt transistor, and the gate of the shunt transistor is turned off.
9. The semiconductor device according to claim 8 , further comprising second resistive members connected with the source and the drain of the switching transistor,
wherein when the gate of the switching transistor is turned off, the reverse bias is applied to a second node between the second resistive members connected with the source and the drain of the shunt transistor, and the gate of the shunt transistor is turned on.
10. The semiconductor device according to claim 7 , wherein the switching transistor and the shunt transistor have the same conductivity type, and
the semiconductor device further comprises a control terminal for inputting a control signal for controlling on/off states of the gate of the switching transistor and controlling a potential at a first node of the shunt transistor.
11. The semiconductor device according to claim 10 , further comprising an inverter connected with the control terminal,
wherein a control signal applied through the inverter is used to control on/off states of the gate of the shunt transistor and a potential at a second node of the switching transistor.
12. A semiconductor device, comprising: a source and drain of a first conductivity type formed in a well of a second conductivity type;
a gate formed between the source and the drain through a gate oxide film; and
a control unit for applying a reverse bias to portions between the source and the well and the drain and the well when the gate is turned off, thereby causing depletion layers between said source and said well and between said drain and said well to expand when said gate is turned off, and when said gate is turned on, said control unit applies a substantially zero differential bias to the portions between the source and the well and between the drain and the well for causing said depletion layers to subsequently contract when said gate is turned on.