IP Library Granted Patent US 7,215,203
Granted Patent B2
US 7,215,203 · App. 11/414,337 · Granted May 8, 2007

High frequency power amplifier circuit device

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Quick Facts
Patent No.
US 7,215,203
App. No.
11/414,337
Granted
May 8, 2007
Kind
B2
Abstract

A multistage high frequency power amplifier-circuit device has a plurality of semiconductor amplification elements connected in a cascade. The circuit device is provided with a bias control circuit used to control the bias voltage or bias current of the output semiconductor amplification element in each stage so as to reduce the variation of the output power with respect to the power control signal voltage in an area around the threshold voltage of the semiconductor amplification elements. This realizes a high frequency power amplifier circuit device provided with excellent controllability of the output power and high efficiency at the time of low power output realized with use of such a control voltage as a power control signal.

Claims (14)

1. A mobile communication apparatus having a power amplifier, the power amplifier comprising:

an input terminal;

an output terminal;

a plurality of amplifying stages each of which has an amplification transistor and a bias circuit which forms a current mirror circuit with the amplification transistor; and

a bias control circuit which receives a power control signal, generates bias signals different from each other and supplies the bias signals to each of the plurality of amplifying stages,

wherein the plurality of amplifying stages are coupled in cascade between the input terminal and the output terminal,

wherein the bias circuit includes a first transistor which has a control terminal, a first terminal and a second terminal, the control terminal being coupled to the second terminal and to an input terminal of the amplification transistor, and

wherein the control terminal of the first transistor of each bias circuit receives one of the bias signals,

wherein the amplification transistor are constituted by metal oxide semiconductor field effect transistor, and

wherein the first transistors are constituted by metal oxide semiconductor field effect transistors.

2. The mobile communication apparatuses according to claim 1 ,

wherein the bias control circuit supplies the bias signals so as to form successively larger current values in the amplifying stages from the input terminal to the output terminal.

3. The mobile communication apparatuses according to claim 2 ,

wherein the bias control circuit has a plurality of stages for respectively generating the bias signals.

Assignments (2)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
MERGER AND CHANGE OF NAME Recorded Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →