Semiconductor device and method for fabricating the same

1. A semiconductor device comprising:

an insulating film formed over a semiconductor substrate and having a first recess;

a plurality of capacitor elements each of which is composed of a capacitor lower electrode, a capacitor insulating film, and a capacitor upper electrode, the capacitor lower electrode being formed on wall and bottom portions of the first recess and having a second recess, the capacitor insulating film of a dielectric film being formed on wall and bottom portions of the second recess and having a third recess, the capacitor upper electrode being formed on wall and bottom portions of the third recess; and

a conductive layer which is formed to cover at least portions of the respective capacitor upper electrodes constituting the plurality of capacitor elements and to extend across the plurality of capacitor elements and which has a lower resistance than the capacitor upper electrode.

2. The device of claim 1 ,

wherein the capacitor upper electrode is formed to be embedded within the third recess.

3. The device of claim 1 ,

wherein the capacitor upper electrode and the conductive layer have almost the same plan shapes.

4. The device of claim 1 ,

wherein the capacitor upper electrode has a fourth recess, and

the conductive layer is formed outside the fourth recess.

5. The device of claim 1 ,

wherein the conductive layer is a cell plate line.