Field-effect transistor and method for fabricating the same
View Patent ↗A field-effect transistor that increases the operation speeds of complementary field-effect transistors. Each of an nMOSFET and a pMODFET has a Ge channel and source and drain regions formed of an NiGe layer. The height of Schottky barriers formed at a junction between a channel region and the source region of the nMOSFET and at a junction between the channel region and the drain region of the nMOSFET is changed by very thin high-concentration segregation layers formed by making As atoms, Sb atoms, S atoms, or the like segregate at the time of forming the NiGe layer. As a result, Schottky barrier height suitable for the nMOSFET and the pMODFET can be obtained, thus being capable of realizing high-speed CMOSFETs.
1. Complementary field-effect transistors comprising:
an n-channel field-effect transistor and a p-channel field-effect transistor each having
a source region and a drain region,
an Si x Ge 1−x (0≦x<1) channel region between the source region and the drain region,
a gate insulating film formed over the Si x Ge 1−x (0≦x<1) channel region, and
a gate electrode formed over the gate insulating film; wherein
the source and drain regions are formed of a compound which includes at least one of silicon and germanium and includes at least a metal;
at least a part of the compound is formed in a portion lower than a height of an interface between the gate insulating film and the channel region, and comes in contact with the channel region; and
junctions between the channel region and the source region and between the channel region and the drain region are Schottky junctions.
2. The complementary field-effect transistors according to claim 1 , wherein the n-channel field-effect transistor has layers which contain predetermined atoms and which change height of Schottky barriers formed at junction interfaces between the channel region and the source region and between the channel region and the drain region.
3. The complementary field-effect transistors according to claim 2 , wherein the predetermined atoms contained in the layers are ones of group V atoms, group VI atoms, and groups V and VI atoms.
4. The complementary field-effect transistors according to claim 2 , wherein:
a tensile stress is applied to the channel region of the n-channel field-effect transistor; and
a compressive stress is applied to the channel region of the p-channel field-effect transistor.
5. The complementary field-effect transistors according to claim 1 , wherein:
the n-channel field-effect transistor has first layers which include first atoms and which change height of Schottky barriers at first junction interfaces between the channel region and the source region and between the channel region and the drain region; and
the p-channel field-effect transistor has second layers which include second atoms and which change height of Schottky barriers at second junction interfaces between the channel region and the source region and between the channel region and the drain region.
6. The complementary field-effect transistors according to claim 5 , wherein:
the first atoms in the first layers are ones of group V atoms, group VI atoms, and group V and VI atoms; and
the second atoms in the second layers are ones of group III atoms, group VI atoms, and group III and VI atoms.
7. The complementary field-effect transistors according to claim 5 , wherein:
a tensile stress is applied to the channel region of the n-channel field-effect transistor; and
a compressive stress is applied to the channel region of the p-channel field-effect transistor.
8. The complementary field-effect transistors according to claim 1 , wherein the channel region of the n-channel field-effect transistor and the channel region of the p-channel field-effect transistor are formed in an Si x Ge 1−x (0≦x<1) layer formed over a supporting substrate with an insulating film between.
9. The complementary field-effect transistors according to claim 1 , wherein the compound includes nickel.
10. Complementary field-effect transistors comprising:
an n-channel field-effect transistor and a p-channel field-effect transistor each having
a source region and a drain region,
an Si x Ge 1−x (0≦x<1) channel region between the source region and the drain region,
a gate insulating film formed over the Si x Ge 1−x (0≦x<1) channel region, and
a gate electrode formed over the gate insulating film; wherein
a whole of the source region and a whole of the drain region are formed of a compound which includes silicon, germanium, or a combination thereof and includes at least a metal; and
junctions between the channel region and the source region and between the channel region and the drain region are Schottky junctions.
11. The complementary field-effect transistors according to claim 10 , wherein:
the n-channel field-effect transistor has first layers which include first atoms and which change height of Schottky barriers at first junction interfaces between the channel region and the source region and between the channel region and the drain region; and
the p-channel field-effect transistor has second layers which include second atoms and which change height of Schottky barriers at second junction interfaces between the channel region and the source region and between the channel region and the drain region.
12. The complementary field-effect transistors according to claim 11 , wherein:
the first atoms in the first layers are ones of group V atoms, group VI atoms, and group V and VI atoms; and
the second atoms in the second layers are ones of group III atoms, group VI atoms, and group III and VI atoms.
13. The complementary field-effect transistors according to claim 11 , wherein:
a tensile stress is applied to the channel region of the n-channel field-effect transistor; and
a compressive stress is applied to the channel region of the p-channel field-effect transistor.
14. The complementary field-effect transistors according to claim 10 , wherein the compound includes nickel.