Apparatus and method for modifying an object

1. A method for modifying an object, comprising:

positioning a reactant on a sample;

directing an energy towards the reactant, wherein the energy is configured with the reactant to modify the sample.

2. The method as in claim 1 , wherein the sample is modified by removing material.

3. The method as in claim 1 , wherein the sample is modified by adding material.

4. The method as in claim 1 , wherein in the sample is a single layered object.

5. The method as in claim 4 , wherein the sample is comprised of at least two layers.

6. The method as in claim 1 , further comprising selecting a reactant based upon the sample.

7. The method as in claim 6 , further comprising selecting a reactant to remove material from the sample.

8. The method as in claim 6 , further comprising selecting a reactant to deposit material on the reactant.

9. The method as in claim 1 , wherein the reactant is positioned with a scanning probe microscope.

10. The method as in claim 9 , wherein a probe tip of the scanning probe microscope positions the reactant.

11. The method of claim 10 , further comprising selecting a tip material based upon the reactant.

12. The method as in claim 11 , wherein the reactant is selected such that the tip does not react with the reactant.

13. The method of claim 11 , further comprising selecting a tip material based upon the reactant, such that the tip reacts with the reactant.

14. The method as in claim 9 , wherein a probe tip of the scanning probe microscope is composed of the reactant.

15. The method as in claim 14 , wherein a portion of the probe tip is deposited on the sample.

16. The method of claim 9 , wherein the probe tip is pre-coated with the reactant.

17. The method as in claim 1 , further comprising retrieving the reactant from a container with a scanning probe microscope.

18. The method as in claim 11 , further comprising placing the reactant on the sample with the scanning probe microscope.

19. The method as in claim 1 , wherein the sample is a semiconductor device.

20. The method as in claim 3 , wherein the material added is a conductor.

21. The method as in claim 3 , wherein the material added is an insulator.

22. The method as in claim 3 , further comprising linking the added material to another area on the sample.

23. The method as in claim 11 , wherein the reactant is retrieved through a hydrophilic process.

24. The method as in claim 11 , wherein the reactant is retrieved through electrical static charge process.

25. The method as in claim 1 , wherein the reactant is positioned on the sample through an electrical static process.

26. The method of claim 1 , wherein an opening is created in a multilayer device further including the steps of creating an insulating plug, creating an opening in the insulating plug, and creating a conductive plug inside the insulating plug.

27. The method as in claim 9 , wherein the scanning probe microscope determines the end point of the process.

28. The method of claim 1 wherein the reactant is delivered through a probe assembly comprising a fluid delivery channel.

29. The method of claim 1 further including the step of removing debris by debris removal means.

30. The method of claim 1 further including the steps of placing reactant in multiple locations to create specific shaped features.

31. A product produced by the process of modifying a sample, comprising:

positioning a reactant on the sample;

directing and energy towards the reactant, wherein the energy is configured to modify the sample.

32. The product produced by the process in claim 31 , wherein the sample is modified by removing material.

33. The product produced by the process in claim 31 , wherein the sample is modified by adding material.

34. The product produced by the process in claim 31 , wherein in the sample is a single layered object.

35. The product produced by the process in claim 31 , wherein the sample is comprised of at least two layers.

36. The product produced by the process in claim 31 , further comprising selecting a reactant based the sample.

37. The product produced by the process in claim 31 , further comprising selecting a reactant to remove material from the sample.

38. The product produced by the process in claim 31 , further comprising selecting a reactant to deposit material on the reactant.

39. The product produced by the process in claim 31 , wherein the reactant is positioned with scanning probe microscope.

40. The product produced by the process in claim 39 , wherein a probe tip of the scanning probe microscope positions the reactant.

41. The product produced by the process in claim 40 , wherein the reactant is delivered through a probe assembly with a fluid delivery channel.

42. The product produced by the process of claim 31 , further comprising removing debris from the sample.

43. The product produced by the process of claim 31 further comprising placing reactant in multiple locations to create specific shaped features.

44. A system for modifying an object, comprising:

means for altering the object, wherein the means for altering is configured to be positioned on the object; and

means for activating the means for altering, wherein the means for activating is directed at the means for altering.

45. The system as in claim 44 , wherein the means for altering is positioned on the object with a means for positioning.

46. The system as in claim 44 , wherein means for altering is a chemical reactant.

47. The system as in claim 44 , wherein the means for activating is an energy source.

48. The system as in claim 44 , wherein the energy source is a laser.

49. The system as in claim 44 , wherein the object is a multilayered device.

50. The system as in claim 44 , wherein the object is a semiconductor.

51. The system as in claim 45 , wherein the means for positioning is a scanning probe microscope.

52. The system as in claim 45 , wherein the means for positioning is a probe assembly is a probe assembly.

53. The system as in claim 44 , further comprising means for removing debris.