IP Library Granted Patent US 7,728,397
Granted Patent B2
US 7,728,397 · App. 11/418,123 · Granted Jun 1, 2010

Coupled nano-resonating energy emitting structures

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,728,397
App. No.
11/418,123
Granted
Jun 1, 2010
Kind
B2
Abstract

A nano-resonating structure constructed and adapted to couple energy from a beam of charged particles into said nano-resonating structure and to transmit coupled energy outside the nano-resonating structure. A plurality of the nano-resonant substructures may be formed adjacent one another in a stacked array, and each may have various shapes, including segmented portions of shaped structures, circular, semi-circular, oval, square, rectangular, semi-rectangular, C-shaped, U-shaped and other shapes as well as designs having a segmented outer surface or area, and arranged in a vertically stacked array comprised of one or more ultra-small resonant structures. The vertically stacked arrays may be symmetric or asymmetric, tilted, and/or staggered.

Claims (48)

1. A nano-resonating structure comprising:

a substrate;

a source of charged particles supported by the substrate creating a beam of charged particles emanating in a direction outwardly from the substrate;

an ultra-small resonant substructure supported by the substrate above the source of charged particles and having a face proximate to the source of charged particles, the face being indented by a cavity near but not in the path of the beam of charged particles, the cavity constructed and adapted to resonate at a frequency in excess of the microwave frequency when energy from the beam of charged particles passes by the cavity and to thereby transmit electromagnetic radiation at the frequency in excess of the microwave frequency outside the nano-resonating structure, a plurality of the ultra-small resonant substructures positioned next to one another in a stacked array, and a plurality of the stacked arrays positioned next to one another in at least two arrays.

2. The nano-resonant structure of claim 1 wherein each of said plurality of ultra-small resonant substructures has a shape selected from the group comprising:

circular-shaped, C-shaped; U-shaped; semi-circular shaped; semi-ovular shaped; segmented-shaped; square-shaped; semi-rectangular shaped; and rectangular shaped.

3. The nano-resonant structure of claim 2 wherein all of the plurality of ultra-small resonant substructures have substantially the same shape.

4. The nano-resonant structure of claim 3 wherein all of the plurality of ultra-small resonant substructures have substantially the same dimensions.

5. The nano-resonant structure of claim 1 wherein said plurality of ultra-small resonant substructures are substantially equally spaced apart.

6. The nano-resonating structure of claim 1 wherein the stacked arrays are vertically stacked arrays.

7. The nano-resonant structure of claim 1 wherein a first of the two stacked arrays has a different number of ultra-small resonant substructures from a second of the two stacked arrays.

8. The nano-resonant structure of claim 1 wherein each of the two stacked arrays has the same number of ultra-small resonant substructures.

9. The nano-resonant structure as in claim 1 wherein the charged particles are selected from the group comprising: electrons, protons, and ions.

10. The nano-resonant structure of claim 1 wherein the two stacked arrays of structures are symmetric.

11. The nano-resonant structure of claim 1 wherein the two stacked arrays of structures are asymmetric.

12. The nano-resonant structure of claim 1 wherein the ultra-small resonant substructures are composed of one from the group of: metals, alloys, non-metallic conductors and dielectrics.

13. The nano-resonant structure of claim 1 wherein the arrays are positioned at an angle relative to the plane of the substrate.

14. The nano-resonant structure of claim 1 , wherein the stacked arrays include:

a first stack comprising:

a first dielectric layer supported by the substrate;

a first anode directly on top of the dielectric layer;

a first insulating layer directly on top of the dielectric layer;

a first ultra-small resonant structure on top of the first insulating layer; and

a second stack comprising:

a second dielectric layer supported by the substrate;

a second anode directly on top of the dielectric layer;

a second insulating layer directly on top of the dielectric layer;

a second ultra-small resonant structure on top of the second insulating layer, wherein,

the first and second stacks are proximate to but not touching the source of charged particles.

15. The nano-resonant structure of claim 1 , wherein the stacked arrays include:

a first stack comprising:

a first plurality of alternating dielectric layers and anodes;

a first insulating layer directly on top of the first plurality of alternating dielectric layers and anodes; and

a first ultra-small resonant structure on top of the first insulting layer; and

a second stack comprising:

a second plurality of alternating dielectric layers and anodes;

a second insulating layer directly on top of the second plurality of alternating dielectric layers and anodes; and

a second ultra-small resonant structure on top of the second insulting layer, wherein,

the first and second stacks are proximate to but not touching the source of charged particles.

16. A nano-resonating structure of comprising:

a substrate;

a source of charged particles supported by the substrate creating a beam of charged particles emanating a direction outwardly from the substrate;

an ultra-small resonant substructure supported by the substrate above the source of charged particles and having a face proximate to the source of charged particles, the face being indented by a cavity near but not in the path of the beam of charged particles, the cavity constructed and adapted to resonate at a frequency in excess of the microwave frequency when energy from a the beam of charged particles passes by the cavity and to thereby transmit electromagnetic radiation at the frequency in excess of the microwave frequency outside the nano-resonating structure; and

a sandwich, comprising:

a dielectric layer supported by the substrate;

an anode directly on top of the dielectric layer;

an insulating layer directly on top of the dielectric layer; and

the ultra-small resonant structure.

Assignments (6)
CORRECTIVE ASSIGNMENT TO CORRECT THE TO REMOVE PATENT 7,559,836 WHICH WAS ERRONEOUSLY CITED IN LINE 27 OF SCHEDULE I AND NEEDS TO BE REMOVED AS FILED ON 4/10/2012. PREVIOUSLY RECORDED ON REEL 028022 FRAME 0961. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT. Recorded Apr 25, 2018
From: ADVANCED PLASMONICS, INC.
To: V.I. FOUNDERS, LLC
Reel/Frame 046011/0827 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNMENT PREVIOUSLY RECORDED AT REEL: 028022 FRAME: 0961. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECTIVE ASSIGNMENT TO CORRECT THE #27 IN SCHEDULE I OF ASSIGNMENT SHOULD BE: TRANSMISSION OF DATA BETWEEN MICROCHIPS USING A PARTICLE BEAM, PAT. NO 7569836.. Recorded Dec 21, 2017
From: ADVANCED PLASMONICS, INC.
To: V.I. FOUNDERS, LLC
Reel/Frame 044945/0570 →
NUNC PRO TUNC ASSIGNMENT Recorded Oct 9, 2012
From: APPLIED PLASMONICS, INC.
To: ADVANCED PLASMONICS, INC.
Reel/Frame 029095/0525 →
NUNC PRO TUNC ASSIGNMENT Recorded Oct 3, 2012
From: VIRGIN ISLAND MICROSYSTEMS, INC.
To: APPLIED PLASMONICS, INC.
Reel/Frame 029067/0657 →
SECURITY AGREEMENT Recorded Apr 10, 2012
From: ADVANCED PLASMONICS, INC.
To: V.I. FOUNDERS, LLC
Reel/Frame 028022/0961 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2006
From: GORRELL, JONATHAN; DAVIDSON, MARK; TOKARZ, JEAN
To: VIRGIN ISLAND MICROSYSTEMS, INC.
Reel/Frame 017875/0797 →