Method for arraying nano material and method for fabricating liquid crystal display device using the same
View Patent ↗A method for arraying nano material includes preparing a substrate coated with a dispersion solution where nano materials are dispersed and arraying the nano materials in the dispersion solution, in a uniform direction using a charged body.
1. A method for fabricating a liquid crystal display device comprising:
preparing a substrate having a gate line thereon;
forming a gate insulating layer on the gate line;
performing a surface treatment to divide the gate insulating layer into a hydrophilic region and a hydrophobic region;
dropping a dispersion solution, in which nano materials are dispersed, onto the hydrophilic region;
arraying the nano materials in a uniform direction using a array apparatus including a charged body;
thermally treating the substrate to fix the nano materials to the gate insulating layer, thereby forming a semiconductor layer;
forming source and drain electrodes spaced apart from each other on the semiconductor layer;
forming a passivation layer on an entire surface of the substrate including the source and drain electrodes, the passivation layer having a contact hole exposing a portion of the drain electrode; and
forming a pixel electrode electrically connected to the drain electrode through the contact hole,
wherein arraying the nano materials comprise the nano materials shift the nano materials to a substantially upright position relative to the substrate in response to the electric field and align by rotating in the direction of movement of the charged conductive body,
wherein the dispersion solution further including a polymer preventing the nano materials from moving along the charged conductive body, a hydrophilic solvent and a dispersant dispersing the nano materials on the substrate,
wherein the array apparatus further including a circular support supporting and providing the charged conductive body,
wherein the nano materials comprise at least one material selected from the group consisting of Si, Ge, Se, Te, B, C, P, GaN, ZnO, SiO 2 , or Al 2 O 3 .
2. The method according to claim 1 , wherein the hydrophilic region comprises a region corresponding to a portion of the gate line.