Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device, includes: mounting a semiconductor chip having an electrode on a wiring substrate having a base substrate and a wiring formed on the base substrate; forming a eutectic alloy by contacting the wiring with the electrode and by heating and pressurizing, and; forming the eutectic alloy so as a part of the eutectic alloy enters between the wiring and the base substrate.
1. A semiconductor device, comprising:
a base substrate;
a wiring that is formed on the base substrate, a first portion of the wiring being peeled off from the base substrate;
an electrode;
a semiconductor chip that is mounted on the wiring so that the electrode faces the wiring; and
a eutectic alloy that is formed so as to come in contact with the electrode, the eutectic alloy being formed so as to surround the first portion of the wiring,
a part of the eutectic alloy being disposed between the wiring and the base substrate.
2. A semiconductor device, according to claim 1 , wherein the eutectic alloy is formed avoiding a region overlapping with the electrode between the wiring and the base substrate.
3. A semiconductor device, comprising:
a base substrate;
a wiring that is formed on the base substrate, the wiring having a second portion, the second portion of the wiring having a first surface facing the base substrate, a first part of the first surface of the second portion of the wiring being in contact with the base substrate, a second part of the first surface of the second portion of the wiring not being contacting in contact with the base substrate;
an electrode;
a semiconductor chip that is mounted on the wiring so that the electrode faces the wiring; and
a eutectic alloy that is formed so as to come in contact with the electrode,
a part of the eutectic alloy being disposed between the wiring and the base substrate, a part of the eutectic alloy being disposed between the second part of the first surface of the second portion of the wiring and the base substrate.
4. A semiconductor device, comprising:
a base substrate;
a wiring that is formed on the base substrate, the wiring having a second portion, the second portion of the wiring having a first surface facing the base substrate, a first part of the first surface of the second portion of the wiring being in contact with the base substrate, the first part of the first surface of the second portion of the wiring being positioned in the center of the first surface of the second portion of the wiring, a second part of the first surface of the second portion of the wiring not being in contact with the base substrate;
an electrode;
a semiconductor chip that is mounted on the wiring so that the electrode faces the wiring; and
a eutectic alloy that is formed so as to come in contact with the electrode,
a part of the eutectic alloy being disposed between the wiring and the base substrate.