Power semiconductor module
View Patent ↗The power semiconductor module includes a module package housing power semiconductor devices therein and a magnetic core set around the module package, such that magnetic core surrounds the power semiconductor devices such as IGBTs. Alternatively, the magnetic core is built in the module package such that the outer circumference faces of magnetic core and the side faces of module package form side faces of the power semiconductor module. The power semiconductor module according to the invention facilitates replacing the magnetic core, setting the magnetic core around the module package thereof, reducing the size thereof, simplifying the structure thereof, and easy manufacture thereof.
1. A power semiconductor module comprising:
a radiator plate having a first side and a second side opposite to the first side;
a substrate with a plurality of power semiconductor devices on the first side of the radiator plate;
a module package housing the substrate with the power semiconductor devices and part of the radiator plate, while maintaining the second side of the radiator plate exposed; and
a magnetic core impedance element, fit around and surrounding the module package, while leaving at least the second side of the radiator exposed, through which a noise current flows out of the power semiconductor module when power is applied to an input terminal of the power semiconductor module.
2. The power semiconductor module according to claim 1 , wherein the magnetic core comprises a first core piece and a second core piece arranged in a coaxial manner, and the inductance value of the first core piece and the inductance value of the second core piece are different from each other at certain frequencies.
3. The power semiconductor module according to claim 1 , wherein the magnetic core comprises thin magnetic plates laminated in a coaxial manner.
4. The power semiconductor module according to claim 1 , further comprising an air gap formed across the magnetic core perpendicular to the circumference thereof.
5. The power semiconductor module according to claim 1 , further comprising protrusions formed on the side faces of the module package, wherein the magnetic core includes corresponding recesses such that the protrusions fit into the recesses in order to fix the magnetic core around the circumference of the module package.
6. The power semiconductor module according to claim 1 , further comprising recesses formed on the side faces of the module package, wherein the magnetic core includes corresponding protrusions that fit into the recesses in order to fix the magnetic core around the circumference of the module package.
7. A power semiconductor module comprising:
a radiator plate having a first side and a second side opposite to the first side;
a substrate with a plurality of power semiconductor devices on the first side of the radiator plate;
a module package housing the substrate with the power semiconductor devices and part of the radiator plate, while maintaining the second side of the radiator plate exposed; and
a magnetic core impedance element built in the module package, wherein outer circumference faces of the magnetic core and side faces of the module package forming side faces of the power semiconductor module while leaving at least the second side of the radiator exposed, through which a noise current flows out of the power semiconductor module when power is applied to an input terminal of the power semiconductor module.
8. The power semiconductor module according to claim 7 , wherein the magnetic core comprises a first core piece and a second core piece arranged in a coaxial manner, and the inductance value of the first core piece and the inductance value of the second core piece are different from each other at certain frequencies.
9. The power semiconductor module according to claim 7 , wherein the magnetic core comprises thin magnetic plates laminated in a coaxial manner.
10. The power semiconductor module according to claim 7 , further comprising an air gap formed across the magnetic core perpendicular to the circumference thereof.
11. A power semiconductor module comprising:
a radiator plate having a first side and a second side opposite to the first side;
a substrate with a plurality of power semiconductor devices on the first side of the radiator plate;
a module package housing the substrate with the power semiconductor devices and part of the radiator plate, while maintaining the second side of the radiator plate exposed; and
a magnetic core impedance element through which a noise current flows out of the cower semiconductor module when cower is applied to an input terminal of the power semiconductor module;
wherein the magnetic core impedance element comprises magnetic powders coated on side faces of module package, with the magnetic core surrounding the power semiconductor devices, while leaving at least the second side of the radiator exposed.
12. The power semiconductor module according to claim 11 , wherein the magnetic core comprises a first core piece and a second core piece arranged in a coaxial manner, and the inductance value of the first core piece and the inductance value of the second core piece are different from each other at certain frequencies.
13. The power semiconductor module according to claim 11 , further comprising an air gap formed across the magnetic core perpendicular to the circumference thereof.