Method for manufacturing semiconductor device
View Patent ↗A method for manufacturing a semiconductor device, including: (a) forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film; (b) fusing the resin layer without being cured and shrunk by a first energy supply processing; (c) forming a resin boss by curing and shrinking the resin layer after fusion by a second energy supply processing; and (d) forming an electrical conducting layer which is electrically connected to the electrode pad and passes through over the resin boss.
1. A method for manufacturing a semiconductor device, comprising:
(a) forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film;
(b) forming a curved surface of the energy cured resin layer by fusing the energy cured resin layer by a first energy supply processing without removing or curing any of the energy cured resin layer,
(c) forming a resin boss by curing and shrinking the energy cured resin layer after fusion by a second energy supply processing; and
(d) forming an electrical conducting layer which is electrically connected to the electrode pad, and is disposed over the resin boss, and is in contact with the passivation film.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein both the first energy supply processing and the second energy supply processing are heat processing, and
the heating temperature in the forming of the resin boss by curing and shrinking the resin layer after fusion by the second energy supply processing is higher than the heating temperature in the fusing of the energy cured resin layer without being cured and shrunk by the first energy supply processing.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the energy cured resin layer is formed in the shape of an approximate quadrangle on cross section by the forming of the energy cured resin layer on the semiconductor substrate having the electrode pad and the passivation film, and
the resin layer is formed in the shape of an approximate semicircle on cross section by the fusing of the resin layer without being cured and shrunk by the first energy supply processing.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein, in the forming of the electrical conducting layer, an oxide film is removed from the surface of the electrode pad and carbonization of the surface of the resin boss is progressed by Ar gas before forming the electrical conducting layer, and
the resin boss is partly removed by using the electrical conducting layer as a mask after the forming of the electrical conducting layer.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein forming the energy cured resin layer on the semiconductor substrate having the electrode pad and the passivation film, the energy cured resin layer is selectively deposited in a location separate from the electrode pad.
6. A method for manufacturing a semiconductor device, comprising:
(a) forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film;
(b) forming the energy cured resin layer to have a cross section formed in the shape of an approximate semicircle by fusing the energy cured resin layer by a first energy supply processing without removing or curing any of the energy cured resin layer;
(c) forming a resin boss by curing and shrinking the energy cured resin layer after fusion by a second energy supply processing; and
(d) forming an electrical conducting layer which is electrically connected to the electrode pad, and is disposed over the resin boss, and is in contact with the passivation film.