Fluted anode with improved capacitance and capacitor comprising same
View Patent ↗An anode with narrow flutes (<0.3 mm) allows for the improved penetration of cathode solutions into the anode body and reduces the redistribution which occurs as the solutions are converted to the solid cathode material.
1. A capacitive element comprising:
an anode comprising one or more flutes wherein each flute has a width of at least 0.06 mm to no more than 0.2 mm;
an anode lead extending from said anode;
a dielectric coated on said anode;
a cathode coated on said dielectric;
an anode termination in electrical contact with said anode lead; and
a cathode termination in electrical contact with said cathode.
2. The capacitive element of claim 1 wherein said anode comprises a pressed powder wherein said pressed powder has a powder charge of at least 50,000 CV/g.
3. The capacitive element of claim 2 wherein said pressed powder has a powder charge of at least 70,000 CV/g.
4. The capacitive element of claim 3 wherein said pressed powder has a powder charge of at least 100,000 CV/g.
5. The capacitive element of claim 2 wherein said powder comprises tantalum.
6. The capacitive element of claim 1 wherein said flute has a width of no more than 0.1 mm.
7. The capacitive element of claim 1 wherein said flute has a depth of at least 0.50 mm.
8. The capacitive element of claim 7 wherein said flute has a depth of at least 0.50 mm to no more than 1.5 mm.
9. A capacitive element comprising:
an anode comprising one or more flutes wherein each flute has a width of at least 0.06 mm to no more than 0.3 mm;
an anode lead extending from said anode;
a dielectric coated on said anode;
a cathode coated on said dielectric;
an anode termination in electrical contact with said anode lead; and
a cathode termination in electrical contact with said cathode wherein said flute has a depth of at least 0.75 mm to no more than 1.25 mm.
10. A process for forming a capacitor comprising:
pressing a powder into an anode comprising flutes with a width of at least 0.06 mm to no more than 0.2 mm;
providing an anode lead wherein said anode lead is in electrical contact with said anode;
forming a dielectric on said anode;
forming a cathode on said dielectric;
forming an anode termination in electrical contact with said anode; and
forming a cathode termination in electrical contact with said cathode.
11. The process for forming a capacitor of claim 10 wherein said anode comprises a pressed powder wherein said pressed powder has a powder charge of at least 50,000 CV/g.
12. The process for forming a capacitor of claim 11 wherein said pressed powder has a powder charge of at least 70,000 CV/g.
13. The process for forming a capacitor of claim 12 wherein said pressed powder has a powder charge of at least 100,000 CV/g.
14. The process for forming a capacitor of claim 10 wherein said powder comprises tantalum.
15. The process for forming a capacitor of claim 10 wherein said flute has a width of no more than 0.1 mm.
16. The process for forming a capacitor of claim 10 wherein said flutes have a depth of at least 0.50 mm.
17. The process for forming a capacitor of claim 16 wherein said flutes have a depth of at least 0.50 mm to no more than 1.5 mm.
18. A process for forming a capacitor comprising:
pressing a powder into an anode comprising flutes with a width of at least 0.06 mm to no more than 0.3 mm;
providing an anode lead wherein said anode lead is in electrical contact with said anode;
forming a dielectric on said anode;
forming a cathode on said dielectric;
forming an anode termination in electrical contact with said anode; and
forming a cathode termination in electrical contact with said cathode wherein said flutes have a depth of at least 0.75 mm to no more than 1.25 mm.
19. A capacitive element comprising:
a tantalum anode formed from tantalum powder with a powder charge of at least 50,000 CV/g wherein said tantalum anode comprising flutes wherein each flute has a width of no more than 0.2 mm and a depth of 0.50 mm to 1.50 mm;
an anode lead extending from said anode;
a dielectric coated on said anode;
a cathode coated on said dielectric;
an anode lead in electrical contact with said anode lead; and
a cathode lead in electrical contact with said cathode lead.
20. The capacitive element of claim 19 wherein said tantalum powder has a powder charge of at least 70,000 CV/g.
21. The capacitive element of claim 20 wherein said tantalum powder has a powder charge of at least 100,000 CV/g.
22. The capacitive element of claim 19 wherein said flute has a depth of at least 0.75 mm to no more than 1.25 mm.
23. The capacitive element of claim 19 wherein said flutes have a width of at least 0.06 mm.
24. The capacitive element of claim 19 wherein said flutes have a width of no more than 0.1 mm.
25. A capacitive element comprising:
an anode comprising one or more flutes wherein each flute has a width of at least 0.06 mm to no more than 0.2 mm;
an anode lead extending from said anode;
a dielectric coated on said anode; and
a cathode coated on said dielectric.