IP Library Granted Patent US 7,449,813
Granted Patent B1
US 7,449,813 · App. 11/431,986 · Granted Nov 11, 2008

Interleaved interdigitated transducers

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Quick Facts
Patent No.
US 7,449,813
App. No.
11/431,986
Granted
Nov 11, 2008
Kind
B1
Abstract

The present invention provides an interleaved IDT that is connected to and overlaps adjacent IDTs. In particular, the interleaved IDT may be connected to both an input IDT and an output IDT via corresponding bus bars. The first bus bar of the interleaved IDT is connected to the bus bar of the input IDT, and the other bus bar of the interleaved IDT is connected to a bus bar of the output IDT. The interleaved IDT is coupled electrically to the respective input and output ports of the overall surface acoustic wave architecture. As such, the bus bars of the respective input and output IDTs are effectively extended, such that the adjacent edges of the respective input and output IDTs partially overlap one another in an interdigitated fashion at the interleaved IDT.

Claims (16)

1. A surface acoustic wave device comprising:

a piezoelectric substrate;

two acoustic reflectors formed on the piezoelectric substrate and defining an acoustic cavity between the acoustic reflectors;

an alpha interdigitated transducer, IDT, formed on the piezoelectric substrate between the acoustic reflectors and comprising a first alpha bus bar electrically coupled to a first interface and a second alpha bus bar;

a beta IDT formed on the piezoelectric substrate between the acoustic reflectors and comprising a first beta bus bar and a second beta bus bar electrically coupled to a second interface; and

an interleaved IDT formed on the piezoelectric substrate between the alpha IDT and the beta IDT and comprising a first interleaved bus bar electrically coupled to the first alpha bus bar of the alpha IDT and a second interleaved bus bar electrically coupled to the second beta bus bar of the beta IDT, each of the alpha IDT, the beta IDT, and the interleaved IDT aligned in acoustic series with each other within the acoustic cavity, wherein at least a portion of the interleaved IDT is chirped.

2. The surface acoustic wave device of claim 1 wherein the entire interleaved IDT is chirped.

3. The surface acoustic wave device of claim 1 wherein the alpha IDT has a first alpha edge adjacent the interleaved IDT and the first alpha edge is chirped.

4. The surface acoustic wave device of claim 1 wherein the beta IDT has a first beta edge adjacent the interleaved IDT and the first beta edge is chirped.

5. The surface acoustic wave device of claim 1 wherein the interleaved IDT chirped; the alpha IDT has a first alpha edge adjacent the interleaved IDT and the first alpha edge is chirped; and the beta IDT has a first beta edge adjacent the interleaved IDT and the first beta edge is chirped.

6. The surface acoustic wave device of claim 1 comprising:

a gamma IDT formed on the piezoelectric substrate between the alpha IDT and one of the acoustic reflectors and comprising a first gamma bus bar and a second gamma bus bar electrically coupled to a third interface; and

a second interleaved IDT formed on the piezoelectric substrate between the alpha IDT and the gamma IDT and comprising a third interleaved bus bar electrically coupled to the first alpha bus bar of the alpha IDT and a fourth interleaved bus bar electrically coupled to the second gamma bus bar of the gamma IDT, each of the alpha IDT, the beta IDT, the gamma IDT, the interleaved IDT, and the second interleaved IDT aligned in acoustic series with each other within the acoustic cavity.

7. The surface acoustic wave device of claim 6 wherein the second interleaved IDT is chirped; both edges of the alpha IDT are chirped; and edges of the beta IDT and gamma IDT adjacent the interleaved IDT or the second interleaved IDT are chirped.

8. The surface acoustic wave device of claim 1 wherein the first interface is associated with a first electrical impedance and the second interface is associated with a second electrical impedance, such that an electrical impedance transformation is provided between the first interface and the second interface.

9. The surface acoustic wave device of claim 1 wherein the alpha IDT and the beta IDT cooperate to provide a filter response between the first interface and the second interface.

Assignments (4)
MERGER Recorded Jun 16, 2016
From: RF MICRO DEVICES, INC.
To: QORVO US, INC.
Reel/Frame 039196/0941 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS (RECORDED 3/19/13 AT REEL/FRAME 030045/0831) Recorded Mar 30, 2015
From: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
To: RF MICRO DEVICES, INC.
Reel/Frame 035334/0363 →
NOTICE OF GRANT OF SECURITY INTEREST IN PATENTS Recorded Mar 19, 2013
From: RF MICRO DEVICES, INC.
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 030045/0831 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 11, 2006
From: LOSEU, ALEH; RAO, JAYANTI JAGANATHA
To: RF MICRO DEVICES, INC.
Reel/Frame 017863/0259 →