Organic thin film transistor, display device using the same and method of fabricating the same

1. A display device comprising:

a gate line and a gate electrode formed on a substrate, the gate line and the gate electrode being formed of a stack of a first gate line layer and a second gate line layer;

a gate insulating layer on the gate electrode;

a data line crossing the gate line on the gate insulating layer to define a pixel region;

source and drain electrodes partially overlapping the gate electrode;

an organic semiconductor layer on the source and drain electrodes and the data line;

a passivation layer on the organic semiconductor layer including a contact hole exposing the drain electrode; and

a pixel electrode on the passivation layer and connected through the contact hole to the drain electrode, wherein the first gate line layer includes a cut portion,

wherein the source electrode protrudes from the data line.

2. The display device according to claim 1 , wherein the first gate line layer is formed of metal and the metal includes one of Al, Cu, Ta, Ti, Mo, Mo alloy, and Al alloy.

3. The display device according to claim 1 , wherein the second gate line layer is formed of a transparent conductive electrode material and the transparent conductive electrode material includes one of ITO, IZO, ZnO, and ITZO.

4. The display device according to claim 1 , wherein one or more cut portions are provided in the pixel region.

5. The display device according to claim 1 , wherein a portion of the organic semiconductor layer corresponding to the cut portion is removed.

6. The display device according to claim 1 , wherein the display device includes a liquid crystal display device or an organic electroluminescence device.

7. A method of fabricating a display device, the method comprising:

forming a gate line and a gate electrode on a substrate, the gate line and the gate electrode being formed of a stack of a first gate line layer and a second gate line layer;

forming a gate insulating layer on the gate electrode;

forming a data line crossing the gate line on the gate insulating layer to define a pixel region, and source and drain electrodes protruding from the data line to partially overlap the gate electrode;

forming an organic semiconductor layer on the front side of the substrate;

irradiating light onto the backside of the substrate;

forming a passivation layer on the organic semiconductor layer, the passivation layer including a contact hole exposing the drain electrode; and

forming a pixel electrode on the passivation layer and connected through the contact hole to the drain electrode, wherein the first gate line layer includes a cut portion.

8. The method according to claim 7 , wherein the organic semiconductor layer remains on the source and drain electrodes and the data line.

9. The method according to claim 7 , wherein the first gate line layer is formed of metal.

10. The method according to claim 7 , wherein the second gate line layer is formed of a transparent conductive electrode material.

11. The method according to claim 7 , wherein the second gate line layer is formed on the first gate line layer.

12. The method according to claim 7 , wherein the first gate line layer is formed on the second gate line layer.

13. The method according to claim 7 , wherein one or more cut portions are provided in the pixel region.

14. The method according to claim 7 , wherein a portion of the organic semiconductor layer corresponding to the cut portion is deactivated so as to become insulating.

15. The method according to claim 7 , wherein a portion of the organic semiconductor layer corresponding to the cut portion is removed.

16. The method according to claim 7 , wherein the display device includes a liquid crystal display device or an organic electroluminescence device.