Organic semiconductor composition, organic semiconductor element, and their manufacturing method

1. A semiconductor element which is a photosensor comprising an organic semiconductor layer and two or more electrodes contacting it or an organic thin-film transistor comprising a support, a gate electrode and a gate insulation layer provided on the support, an organic semiconductor layer provided on the gate insulation layer, and a source electrode and a drain electrode each contacting the organic semiconductor layer, wherein the organic semiconductor layer contains an organic semiconductor composition comprising particles of a metal, an inorganic oxide, an inorganic nitride or polymers and an organic semiconducting compound chemically combined through a substituent with the particles.

2. The semiconductor element of claim 1 , wherein the particles are metal particles.

3. The semiconductor element of claim 1 , wherein the organic semiconducting compound combines with the particles through a sulfide group, a disulfide group, a carboxyl group, a sulfonic acid group, a sulfinic acid group, a phosphonic acid group, or a phosphate group.

4. The semiconductor element of claim 3 , wherein the organic semiconducting compound combines with the particles through a sulfide group.

5. The semiconductor element of claim 1 , wherein the organic semiconducting compound is a π-conjugated polymer or oligomer.

6. The semiconductor element of claim 5 , wherein the π-conjugated polymer or oligomer is a polythiophene derivative.

7. The semiconductor element of claim 6 , wherein the polythiophene derivative is a regioregular poly(3-alkylthiophene).

8. The semiconductor element of claim 7 , wherein the alkyl group of the regioregular poly(3-alkylthiophene) is an alkyl group having a carbon atom number of from 4 to 15.

9. The semiconductor element of claim 7 , wherein the regioregular poly(3-alkylthiophene) combining with the particles is dispersed in a solvent.

10. The semiconductor element of claim 9 , wherein the solvent can dissolve the regioregular poly(3-alkylthiophene).

11. The semiconductor element of claim 7 , wherein the regioregular poly(3-alkylthiophene) combining with the particles is a mixture of first particles, with which poly(5-substituted 3-alkylthiophene) combines through the substituent of the 5 position, and second particles, with which poly(2-substituted 3-alkylthiophene) combines through the substituent of the 2-position.

12. The semiconductor element of claim 11 , wherein the first particles, with which poly(5-substituted 3-alkylthiophene) combines through the substituent of the 5-position, are dispersed in a first solvent to obtain a first dispersion, second particles, with which poly(2-substituted 3-alkylthiophene) combines through the substituent of the 2-position, are dispersed in a second solvent to obtain a second dispersion, and both dispersions are mixed.

13. The semiconductor element of claim 5 , wherein the π-conjugated polymer or oligomer is a polyporphyrin derivative.

14. The semiconductor element of claim 13 , wherein the polyporphyrin derivative is poly(imidazolylporphyrin-metal complex).

15. A manufacturing method of an organic semiconductor composition comprises the steps of:

dispersing, in a solvent, particles with which an organic semiconducting monomer having a linkage group combines through the linkage group to obtain a dispersion; and

adding to the dispersion a solution of an organic semiconducting dimer,

whereby the monomer and the dimer are located on the surface of the particles and a polymer of the monomer is formed between the particles.

16. The manufacturing method of claim 15 , wherein the particles are metal particles.

17. The manufacturing method of claim 15 , wherein the organic semiconducting monomer combines with the particles through a sulfide group, a disulfide group, a carboxyl group, a sulfonic acid group, a sulfinic acid group, a phosphonic acid group, or a phosphate group.