IP Library Granted Patent US 7,695,981
Granted Patent B2
US 7,695,981 · App. 11/433,824 · Granted Apr 13, 2010

Seed layers, cap layers, and thin films and methods of making thereof

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Quick Facts
Patent No.
US 7,695,981
App. No.
11/433,824
Granted
Apr 13, 2010
Kind
B2
Abstract

A seed layer is formed on a substrate using a first biological agent. The seed layer may comprise densified nanoparticles which are bound to the biological agent. The seed layer is then used for a deposition of a metal layer, such as a barrier layer, an interconnect layer, a cap layer and/or a bus line for a solid state device.

Claims (140)

1. A device, comprising:

a substrate;

a seed layer comprising a biological agent residue located on the substrate; and

a metal layer located on the seed layer,

wherein at least a portion of the biological agent residue is formed from at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid; and

wherein:

the substrate comprises at least one of a trench or via;

the seed layer is located in the at least one of the trench or via; and

the metal layer is located at least in the trench;

wherein the biological agent selectively binds to at least one of the substrate and the metal layer; and

wherein the metal layer comprises a barrier layer which is located below an interconnect layer.

2. The device of claim 1 , wherein the biological agent comprises cysteine.

3. The device of claim 1 , wherein the biological agent selectively binds to the metal layer and non-selectively binds to the substrate.

4. A device, comprising:

a substrate;

a seed layer comprising a biological agent residue located on the substrate; and

a metal layer located on the seed layer,

wherein at least a portion of the biological agent residue is formed from at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid;

wherein:

the metal layer comprises a metal layer which is selectively deposited on the seed layer; and

the biological agent selectively binds to at least one of the substrate and the metal layer;

wherein:

the seed layer comprises metal ions or nanoparticles which catalyze selective deposition of the metal layer from a solution; and

the biological agent residue is located between the substrate and the seed layer; and

wherein:

the substrate comprises an interlayer insulating layer containing a via connected to a trench;

the metal layer comprises at least one of a barrier layer and an interconnect layer located at least in the trench; and

the seed layer is located between the interlayer insulating layer and the metal layer.

5. The device of claim 4 , further comprising at least one semiconductor device located below the interlayer insulating layer.

6. The device of claim 4 , wherein the biological agent comprises cysteine.

7. The device of claim 4 , wherein the biological agent selectively binds to the metal layer and non-selectively binds to the substrate.

8. The device of claim 4 , further comprising:

an electromigration lifetime enhancing cap layer located on the interconnect; and

a second seed layer comprising cysteine located between the cap layer and the interconnect.

9. The device of claim 5 , further comprising:

an electromigration lifetime enhancing cap layer located on the interconnect layer; and

a second seed layer comprising a second biological agent residue located between the cap layer and the interconnect layer.

10. A device, comprising:

a substrate;

a seed layer comprising a biological agent residue located on the substrate; and

a metal layer located on the seed layer,

wherein at least a portion of the biological agent residue is formed from at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the metal layer comprises a bus line of a display device.

11. The device of claim 10 , wherein the biological agent comprises cysteine.

12. The device of claim 10 , wherein the biological agent selectively binds to the metal layer and non-selectively binds to the substrate.

13. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein:

the seed layer comprises a layer of metal nanoparticles connected to the substrate by the biological agent;

the biological agent comprises a first binding moiety for selectively binding to the substrate and a second binding moiety for selectively binding to the nanoparticles; and

the seed layer is selectively deposited on predetermined portions of the substrate.

14. The method of claim 13 , wherein at least the biological agent is formed through a mask on predetermined portions of the substrate.

15. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the biological agent and the seed layer are formed non-selectively over the entire substrate followed by patterning the seed layer.

16. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, and wherein the biological agent selectively binds to at least one of the substrate and the metal layer; and

forming the seed layer on a first portion of the substrate and forming a contrast agent on a second portion of the substrate such that the metal layer is selectively formed on the seed layer but not on the contrast agent.

17. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate;

selectively forming a metal layer on the seed layer; and

removing the biological agent before or after the step of selectively depositing the metal layer;

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, and wherein the biological agent selectively binds to at least one of the substrate and the metal layer.

18. The method of claim 17 , wherein at least the biological agent is formed through a mask on predetermined portions of the substrate.

19. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the step of selectively depositing the metal layer comprises selectively depositing the metal layer on the seed layer using electroless plating.

20. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and

wherein:

the substrate comprises an interlayer insulating layer containing a via connected to a trench; and

the metal layer comprises at least one of a barrier layer and an interconnect layer located at least in the trench.

21. The method of claim 20 , further comprising:

forming a second biological agent and a second seed layer on the interconnect layer; and

selectively forming an electromigration lifetime enhancing cap layer on the second seed layer.

22. The method of claim 20 , wherein the metal layer comprises an interconnect layer for a semiconductor device made by a dual damascene process.

23. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the metal layer comprises a bus line for a display device.

24. The method of claim 23 , wherein at least the biological agent is formed through a mask on predetermined portions of the substrate.

25. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and, wherein the step of forming the biological agent and the seed layer comprises forming a plurality of proteins bound to metal nanoparticles or to metal ions.

26. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the step of forming the biological agent and the seed layer comprises forming a plurality of amino acids bound to metal nanoparticles or to metal ions.

27. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the step of forming the biological agent and the seed layer comprises forming a plurality of peptides bound to metal nanoparticles or to metal ions.

28. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the step of forming the biological agent and the seed layer comprises first binding the biological agent to metal nanoparticles followed by binding the biological agent and the nanoparticles to the substrate.

29. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid, wherein the biological agent selectively binds to at least one of the substrate and the metal layer, and wherein the step of forming the biological agent and the seed layer comprises first binding the biological agent to the substrate followed by either selectively forming metal ions or metal nanoparticles on the biological agent from a solution or binding pre-formed metal nanoparticles to the biological agent.

30. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises at least one of peptide, virus, protein, amino acid, nucleic acid, or lipid and wherein:

the step of providing a substrate comprises providing a substrate comprising a semiconductor device and a copper interconnect exposed in an interlayer insulating layer;

the step of forming a biological agent and a seed layer on the substrate comprises selectively forming a cysteine biological agent on the copper interconnect and selectively forming a metal nanoparticle seed layer on the biological agent; and

the step of selectively forming a metal layer on the seed layer comprises selectively plating a CoWB or CoWP layer on the seed layer.

31. A device, comprising:

a substrate;

a seed layer comprising a biological agent residue located on the substrate; and

a metal layer located on the seed layer,

wherein the biological agent selectively binds to at least one of the substrate and the metal layer; and

wherein the metal layer comprises a bus line of a display device.

32. The device of claim 31 , wherein the biological agent comprises cysteine.

33. The device of claim 31 , wherein the biological agent selectively binds to the metal layer and non-selectively binds to the substrate.

34. A method of forming a metal layer, comprising:

providing a substrate;

forming a biological agent and a seed layer on the substrate; and

selectively forming a metal layer on the seed layer,

wherein the biological agent comprises cysteine selectively bound to the substrate and to the seed layer.

Assignments (4)
RELEASE Recorded Jul 21, 2011
From: SILICON VALLEY BANK
To: CAMBRIOS TECHNOLOGIES CORPORATION
Reel/Frame 026632/0532 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2010
From: CAMBRIOS TECHNOLOGIES CORPORATION
To: SILURIA TECHNOLOGIES, INC.
Reel/Frame 023729/0158 →
SECURITY AGREEMENT Recorded Oct 3, 2008
From: CAMBRIOS TECHNOLOGIES CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 021633/0172 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 24, 2006
From: DAI, HAIXIA; PAKBAZ, KHASHAYAR; SPAID, MICHAEL; NIKIFOROV, THEO
To: CAMBRIOS TECHNOLOGIES CORPORATION
Reel/Frame 017979/0907 →