IP Library Granted Patent US 7,655,081
Granted Patent B2
US 7,655,081 · App. 11/433,825 · Granted Feb 2, 2010

Plating bath and surface treatment compositions for thin film deposition

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Quick Facts
Patent No.
US 7,655,081
App. No.
11/433,825
Granted
Feb 2, 2010
Kind
B2
Abstract

An aqueous substrate surface treatment composition includes cysteine and an acidic solution having a pH of about 7 or less. The composition enables a selective deposition of a metal ion sensitizer and a subsequent selective plating of a metallic cap layer. Various CoWP plating bath compositions are also provided which may be used to form the cap layer.

Claims (44)

1. An aqueous CoWP plating bath composition, comprising:

a cobalt salt;

a reducing agent;

a metal chelator;

a buffer; and

a tungstate salt;

wherein a ratio of molar concentrations of the cobalt salt to the reducing agent is from about 1:3 to about 1:5, and a ratio of molar concentrations of the cobalt salt to the metal chelator is from about 1:2.5 to about 1:3.5, wherein at least one of the (i) reducing agent and (ii) metal chelator comprises an alkali metal.

2. The composition of claim 1 , wherein the reducing agent comprises a hypophosphite salt.

3. The composition of claim 2 , wherein the hypophosphite salt is selected from a group consisting of H 3 PO 2 , NaH 2 PO 2 , KH 2 PO 2 , or NH 4 H 2 PO 2 .

4. The composition of claim 1 , wherein the metal chelator comprises a citrate salt.

5. The composition of claim 4 , wherein the citrate salt is selected from a group consisting of H 3 C 6 H 5 O 7 , Na 3 C 6 H 5 O 7 , K 3 C 6 H 5 O 7 or (NH 4 ) 3 C 6 H 5 O 7 .

6. The composition of claim 1 , wherein the buffer is selected from a group consisting of H 3 BO 3 , ethanolamine, TAPS, bicine, or CHES.

7. The composition of claim 1 , wherein:

the cobalt salt is selected from a group consisting of CoSO 4 , CoCl 2 or Co(OH) 2 ;

the reducing agent comprises a hypophosphite salt selected from a group consisting of H 3 PO 2 , NaH 2 PO 2 , KH 2 PO 2 , or NH 4 H 2 PO 2 ;

the metal chelator comprises a citrate salt selected from a group consisting of H 3 C 6 H 5 O 7 , Na 3 C 6 H 5 O 7 , K 3 C 6 H 5 O 7 or (NH 4 ) 3 C 6 H 5 O 7 ;

the buffer is selected from a group consisting of H 3 BO 3 , ethanolamine, TAPS, bicine, or CHES; and

the tungstate salt is selected from a group consisting of Na 2 WO 4 , K 2 WO 4 , or (NH 4 ) 2 WO 4 .

8. An aqueous CoWP plating bath composition, comprising

a cobalt salt selected from a group consisting of CoSO 4 or Co(OH) 2 ;

a reducing agent comprising a hypophosphite salt selected from a group consisting of H 3 PO 2 or NH 4 H 2 PO 2 ;

a metal chelator comprising (NH 4 ) 3 C 6 H 5 O 7 ;

a buffer selected from a group consisting of H 3 BO 3 , ethanolamine, TAPS, bicine, or CHES; and

a tungstate salt comprising (NH 4 ) 2 WO 4 ;

wherein a ratio of molar concentrations of the cobalt salt to the reducing agent is from about 1:3 to about 1:5, and a ratio of molar concentrations of the cobalt salt to the metal chelator is from about 1:2.5 to about 1:3.5;

wherein the composition comprises cysteine; and

wherein the composition comprises an alkali-free bath solution.

9. An aqueous CoWP plating bath composition, comprising:

from about 0.03 to about 0.15 M Co(OH) 2 ;

from about 0.05 to about 0.3 M H 3 PO 2 ;

from about 0.1 to about 0.5 M Na 3 C 6 H 5 O 7 ;

from about 0.3 to about 0.6 M H 3 BO 3 ; and

from about 0.01 to about 0.08 M Na 2 WO 4 ;

wherein the composition has a pH of about 8.0 to about 10.0 at a temperature from about 65 to about 85° C.

10. An aqueous CoWP plating bath composition, comprising:

from about 0.03 to about 0.15 M Co(OH) 2

from about 0.05 to about 0.3 M H 3 PO 2 ;

from about 0.1 to about 0.5 M (NH 4 ) 3 C 6 H 5 O 7 ;

from about 0.3 to about 0.6 M H 3 BO 3 ; and

from about 0.01 to about 0.08 M H 2 WO 4

wherein the composition has a pH of about 8.0 to about 10.0 at a temperature from about 70 to about 85° C.; and

wherein the composition comprises cysteine.

11. The composition of claim 1 , further comprising cysteine.

12. The composition of claim 9 , further comprising cysteine.

Assignments (4)
RELEASE Recorded Jul 21, 2011
From: SILICON VALLEY BANK
To: CAMBRIOS TECHNOLOGIES CORPORATION
Reel/Frame 026632/0532 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 4, 2010
From: CAMBRIOS TECHNOLOGIES CORPORATION
To: SILURIA TECHNOLOGIES, INC.
Reel/Frame 023729/0158 →
SECURITY AGREEMENT Recorded Oct 3, 2008
From: CAMBRIOS TECHNOLOGIES CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 021633/0172 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 24, 2006
From: DAI, HAIXIA; PAKBAZ, KHASHAYAR; SPAID, MICHAEL; NIKIFOROV, THEO
To: CAMBRIOS TECHNOLOGIES CORPORATION
Reel/Frame 017979/0952 →