Anodically bonded ultra-high-vacuum cell
View Patent ↗The present invention discloses an anodically bonded vacuum cell structure with a glass substrate including a cavity, and a substrate deposited on the glass substrate, thereby enclosing the cavity to form a bonding interface. The bonding interface having silicon such that the substrate includes a layer of silicon or a secondary substrate with silicon layer bonded onto the secondary substrate.
1. An anodically bonded vacuum cell structure/assembly comprising:
a glass substrate having a cavity, wherein said cavity comprising an alkali metal;
a substrate deposited on said glass substrate thereby enclosing the cavity to form a bonding interface, said bonding interface having silicon.
2. The structure of claim 1 wherein said substrate comprises a layer of silicon.
3. The structure of claim 2 wherein said silicon layer is coated with a material selected from a group consisting of silver, gold, platinum, copper, nickel, titanium, rhodium and combinations thereof.
4. The structure of claim 1 wherein said substrate comprises a silicon layer on top of a secondary substrate.
5. The structure of claim 4 wherein said silicon layer is placed to substantially cover a top surface of the secondary substrate.
6. The structure of claim 4 wherein said silicon layer is placed only at a portion of the secondary substrate with the bonding interface.
7. The structure of claim 4 wherein said silicon layer is a crystalline silicon bonded to the secondary substrate.
8. The structure of claim 4 wherein said silicon layer is an amorphous silicon or polycrystalline silicon deposited by a chemical vapor deposition process on top of the secondary substrate.
9. The structure of claim 4 wherein said secondary substrate comprises a cavity below the bonding interface.
10. The structure of claim 9 wherein said silicon layer having an aperture to provide a path to and from the cavity of the secondary substrate.
11. The structure of claim 4 wherein said secondary substrate comprises a glass.
12. The structure of claim 4 wherein said secondary substrate comprises of a material selected of a group consisting of aluminum nitride, silicon nitride, silicon carbide, III-IV compounds such as GaAs and combinations thereof.
13. The structure of claim 1 wherein said substrate is a silicon chip having a metal coating, said metal coating selected of a group consisting of silver, gold, platinum, copper, nickel, titanium, rhodium and combinations thereof.
14. The structure of claim 1 wherein said glass substrate comprises a wall having a thickness ranging between about 0.5 mm to about 20 mm.
15. The structure of claim 1 wherein said substrate having a thickness ranging between about 10 μm to about 50 mm.
16. The structure of claim 1 wherein said cavity having side dimensions ranging between about 2 mm to about 50 mm.
17. The structure of claim 1 wherein said substrate comprises an optical component.