Light source including quantum dot material and apparatus including same
A light source comprising a light emitting device and quantum dot material is disclosed. According to various embodiments, the quantum dot material is positioned relative to the light emitting device such that the quantum dot material absorbs light emitted from the light emitting device and converts the wavelengths of photons emitted from the light emitting device to longer wavelengths. Judicious selection of the quantum dot material allows the emission spectra of the light source to be tailored to meet the needs of a particular illumination application, and avoids the drawbacks associated with the use of interference filters because the quantum dot material can upconvert the wavelengths emitted from the light emitting device such that the emission spectra of the light source can include wavelengths that are not emitted by the light emitting device itself.
1 . A light source comprising:
a light emitting device;
quantum dot material positioned to absorb light emitted from the light emitting device and for converting the wavelengths of at least a portion of the photons emitted from the light emitting device to longer wavelengths.
2 . The light source of claim 1 , wherein the quantum dot material comprises:
a host material; and
a plurality of quantum dot material intra-layers suspended in the host material.
3 . The light source of claim 1 , wherein the quantum dot material is positioned on the light emitting device.
4 . The light source of claim 1 , wherein the light emitting device comprises at least one LED.
5 . The light source of claim 1 , wherein the light emitting device comprises at least one laser.
6 . The light source of claim 1 , wherein the light emitting device comprises at least one laser diode.
7 . The light source of claim 1 , wherein the light emitting device comprises a lamp.
8 . The light source of claim 1 , wherein the light emitting device comprises a combination of one or more LEDs, one or more lasers, or one or more laser diodes.
9 . The light source of claim 1 , further comprising a quantum dot material assembly, wherein the quantum dot material assembly comprises:
an optically transparent substrate; and
at least one quantum dot material layer located on the substrate and comprising the quantum dot material.
10 . The light source of claim 9 , wherein the quantum dot material layer comprises:
a host material; and
a plurality of quantum dot material intra-layers suspended in the host material.
11 . The light source of claim 10 , wherein each of the plurality of quantum dot material intra-layers have different light emission characteristics.
12 . The light source of claim 1 , further comprising a quantum dot material assembly, wherein the quantum dot material assembly comprises:
an optically transparent substrate;
a first quantum dot material layer located on the substrate and comprising quantum dot material; and
a second quantum dot material layer located on the first quantum dot material layer and comprising quantum dot material, wherein the emission characteristics of the second quantum dot layer are different from the emission characteristics of the first quantum dot material layer.
13 . The light source of claim 1 , further comprising a plurality of quantum dot material assemblies, wherein each quantum dot material assembly comprises:
an optically transparent substrate; and
at least one quantum dot material layer located on the substrate and comprising quantum dot material
14 . The light source of claim 1 , wherein the emission spectra of the light source corresponds to an adopted illumination standard.
15 . The light source of claim 14 , wherein the adopted illumination standard is selected from the group consisting of an incandescent illumination standard, a daylight illumination standard and a fluorescent illumination standard.
16 . The light source of claim 1 , wherein the emission spectra of the light source is a narrow band of wavelengths.
17 . The light source of claim 9 , further comprising a lower lens between the light emitting device and the quantum dot material assembly.
18 . The light source of claim 17 , further comprising an upper lens, such that the quantum dot material assembly is between the light emitting device and the upper lens.
19 . The light source of claim 9 , further comprising an upper lens, such that the quantum dot material assembly is between the light emitting device and the upper lens.
20 . A light source comprising:
a light emitting diode (LED); and
a first quantum dot material assembly comprising:
an optically transparent substrate; and
at least one quantum dot material layer located on the substrate, wherein the first quantum dot material assembly is oriented such that photons from the LED are absorbed by the quantum dot material layer and the quantum dot material layer converts the wavelengths of at least a portion of the photons emitted from the LED to longer wavelengths.
21 . The light source of claim 20 , wherein the quantum dot material layer comprises:
a host material; and
a plurality of quantum dot material intra-layers suspended in the host material, wherein each of the plurality of quantum dot material intra-layers has different light emission characteristics.
22 . The light source of claim 20 , wherein the first quantum dot material assembly comprises:
a first quantum dot material layer on the substrate; and
a second quantum dot material layer on the first quantum dot material layer, wherein the first quantum dot material layer has different light emission characteristics than the second quantum dot material layer.
23 . The light source of claim 20 , further comprising a second quantum dot material assembly, wherein in the first quantum dot material assembly is between the LED and the second quantum dot material assembly, and wherein the second quantum dot material assembly comprises:
a second substrate; and
at least one second quantum dot material layer on the second substrate, wherein the second quantum dot material assembly is oriented such that photons from the first quantum dot assembly are absorbed by the second quantum dot material layer and the second quantum dot material layer converts the wavelengths of at least a portion of the photons emitted from the first quantum dot material layer to longer wavelengths.
24 . The light source of claim 20 , further comprising a second quantum dot material assembly, wherein in the first quantum dot material assembly is between the LED and the second quantum dot material assembly, and wherein the second quantum dot material assembly comprises:
a second optically transparent substrate; and
at least one second quantum dot material layer on the second substrate, wherein the second quantum dot material layer transmits photons emitted from the first quantum dot material assembly and converts the wavelengths of a second portion of photons emitted from the LED to longer wavelengths.
25 . The light source of claim 20 , wherein the quantum dot material layer emits light having wavelengths covering the range of 400 nm to 700 nm.
26 . The light source of claim 25 , wherein the LED emits light having wavelengths less than 400 nm.
27 . The light source of claim 25 , wherein the LED emits light having wavelengths between 400 nm and 425 nm.
28 . The light source of claim 20 , wherein the emission spectra of the light source corresponds to an adopted illumination standard.
29 . The light source of claim 28 , wherein the adopted illumination standard is selected from the group consisting of an incandescent illumination standard, a daylight illumination standard and a fluorescent illumination standard.
30 . An apparatus for measuring a spectroscopic property of a target material comprising:
a light source for emitting light photons to impinge upon the target material, the light source comprising:
a light emitting device;
quantum dot material positioned to absorb light emitted from the light emitting device and for converting the wavelengths of photons emitted from the light emitting device to longer wavelengths;
a optical radiation sensing device for detecting light reflected by the target material.
31 . The apparatus of claim 30 , wherein the quantum dot material comprises:
a host material; and
a plurality of quantum dot material intra-layers suspended in the host material.
32 . The apparatus of claim 30 , wherein the light emitting device comprises at least one LED.
33 . The apparatus of claim 30 , wherein the light emitting device comprises a combination of one or more LEDs, one or more lasers, or one or more laser diodes.
34 . The apparatus of claim 30 , further comprising at least one quantum dot material assembly, wherein the at least one quantum dot material assembly comprises:
an optically transparent substrate; and
at least one quantum dot material layer located on the substrate and comprising the quantum dot material.
35 . The apparatus of claim 34 , wherein the quantum dot material layer comprises:
a host material; and
a plurality of quantum dot material intra-layers suspended in the host material, wherein each of the plurality of quantum dot material intra-layers have different light emission characteristics.
36 . The apparatus of claim 30 , wherein the emission spectra of the light source corresponds to an adopted illumination standard.
37 . The apparatus of claim 30 , wherein the emission spectra of the light source is a narrow band of wavelengths.
38 . The apparatus of claim 34 , further comprising a lower lens between the light emitting device and the quantum dot material assembly.
39 . The apparatus of claim 38 , further comprising an upper lens, such that the quantum dot material assembly is between the light emitting device and the upper lens.
40 . The apparatus of claim 34 , further comprising an upper lens, such that the quantum dot material assembly is between the light emitting device and the upper lens.
41 . The apparatus of claim 34 , wherein:
the light illuminating device comprises at least one LED; and
the quantum dot material assembly emits light having wavelengths covering the range of 400 nm to 700 nm.
42 . The apparatus of claim 41 , wherein the LED emits light having wavelengths less than 400 nm.
43 . The light source of claim 41 , wherein the LED emits light having wavelengths between 400 nm and 425 nm.