Semiconductor integrated circuit device and liquid crystal display driving semiconductor integrated circuit device
View Patent ↗A voltage impressed across the drain and source is reduced by further connecting in series one or two or more transistors between a couple of transistors in an output circuit including an output stage formed by connecting in series a couple of output transistors between a couple of power source voltage terminals and outputting the signal supplied to a gate signal generating circuit of a liquid crystal panel. Simultaneously, potential setting switch elements are also provided to prepare an intermediate potential of a couple of power source voltages and impress the intermediate potential to a base material of output transistors of the OFF state while the output transistors are turned OFF. Thereby, a liquid crystal display driving semiconductor integrated circuit may be realized. Accordingly, low manufacturing cost can also be realized without use of the high voltage resistance process by constituting a circuit for outputting the signal supplied to a gate signal generating circuit of a liquid crystal panel with an element having low resistance voltage. Moreover, operation rate of the output circuit can be improved and power consumption thereof can also be reduced.
1. A semiconductor integrated circuit comprising:
a first power source voltage terminal to which a first power source voltage is supplied;
a second power source voltage terminal to which a second power source voltage is supplied;
an output circuit including a plurality of transistors coupled in series between said first power source voltage terminal and said second power source voltage terminal; and
potential setting means coupled to any connecting node among said plurality of transistors to set the potential of the connecting node to a potential between said first power source voltage and said second power source voltage when two transistors coupled to said connecting node are turned OFF,
wherein each voltage resistance of a plurality of transistors is smaller than a potential difference between said first power source voltage and said second power source voltage.
2. The semiconductor integrated circuit according to claim 1 ,
wherein a plurality of said transistors connected in series are comprised of a first transistor and a second transistor of a first conductivity type and a third transistor and a fourth transistor of a second conductivity type,
wherein a first potential setting means is connected to a connecting node of said first transistor and said second transistor, and a second potential setting means is connected to a connecting node of said third transistor and said fourth transistor, and
wherein a connecting node of said second transistor and said third transistor is connected to an output terminal.
3. The semiconductor integrated circuit according to claim 2 ,
wherein a plurality of said transistors are insulated gate type field effect transistors,
wherein said first potential setting means sets the connecting node of said first transistor and said second transistor and a base material of said second transistor to a first potential between said first power source voltage and said second power source voltage, and
wherein said second potential setting means sets the connecting node of said third transistor and said fourth transistor and a base material of said third transistor to a second potential between said first power source voltage and said second power source voltage.
4. The semiconductor integrated circuit according to claim 1 , wherein a plurality of said transistors are respectively controlled by a signal converted with a level converting circuit for converting an input signal of a first amplitude to a signal of a second amplitude larger than said first amplitude.
5. The semiconductor integrated circuit according to claim 1 , wherein said potential setting means is a switch circuit connecting in series a first conductivity type transistor and a second conductivity type transistor.
6. A liquid crystal display driving semiconductor integrated circuit comprising:
a first power source voltage terminal to which a first power source voltage is supplied;
a second power source voltage terminal to which a second power source voltage is supplied;
an output circuit for outputting a signal supplied to a scanning line driving circuit of a liquid crystal panel on which said scanning line driving circuit for generating the drive signal applied to the scanning lines of said liquid crystal panel is mounted, wherein said output circuit is provided with an output circuit including a plurality of transistors connected in series between said first power source voltage terminal and said second power source voltage terminal; and
potential setting means coupled to any of connecting nodes of a plurality of said transistors to set potential of the connecting node to a potential between said first power source voltage and said second power source voltage when two transistors connected to said connecting node are turned OFF,
wherein a plurality of said transistors are smaller in each voltage resistance than a potential difference between said first power source voltage and said second power source voltage.
7. The liquid crystal display driving semiconductor integrated circuit according to claim 6 ,
wherein a plurality of said transistors connected in series are comprised of a first transistor and a second transistor of a first conductivity type and a third transistor and a fourth transistor of a second conductivity type,
wherein a first potential setting means is connected to a connecting node of said first transistor and said second transistor, and a second potential setting means is connected to a connecting node of said third transistor and said fourth transistor, and
wherein a connecting node of said second transistor and said third transistor is connected to an output terminal.
8. The liquid crystal display driving semiconductor integrated circuit according to claim 7 ,
wherein a plurality of said transistors are insulated gate type field effect transistors,
wherein said first potential setting means sets the connecting node of said first transistor and said second transistor and a base material of said second transistor to a first potential between said first power source voltage and said second power source voltage, and
wherein said second potential setting means sets the connecting node of said third transistor and said fourth transistor and a base material of said third transistor to a second potential between said first power source voltage and said second power source voltage.
9. The semiconductor integrated circuit according to claim 6 , wherein a plurality of said transistors are respectively controlled by a signal converted with a level converting circuit for converting an input signal of a first amplitude to a signal of a second amplitude larger than said first amplitude.
10. The liquid crystal display driving semiconductor integrated circuit according to claim 6 , wherein said potential setting means is a switch circuit connecting in series a first conductivity type transistor and a second conductivity type transistor.