IP Library Granted Patent US 8,226,849
Granted Patent B2
US 8,226,849 · App. 11/435,092 · Granted Jul 24, 2012

Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same

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Quick Facts
Patent No.
US 8,226,849
App. No.
11/435,092
Granted
Jul 24, 2012
Kind
B2
Abstract

Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using it. Also provided are materials for the metal-polishing liquid, which include an oxidized-metal etchant, a protective film-forming agent, and a dissolution promoter for the protective film-forming agent.

Claims (26)

1. A concentrated metal-polishing liquid material comprising an ingredient group of a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water,

wherein said protective film-forming agent is an azole compound,

wherein said dissolution promoter is a liquid organic solvent for the protective film-forming agent, is at least one of alcohols, ethers and ketones, has a property that it increases dissolution of the protective film-forming agent in water, and in which the solubility of the protective film-forming agent is at least 40 g/liter,

wherein a water content of the concentrated metal-polishing liquid material is between 75 and 98% by weight, and

wherein said concentrated metal-polishing liquid material is to be diluted with a diluent, to form a metal-polishing liquid, and used with an oxidized-metal etchant and oxidizer.

2. The concentrated metal-polishing liquid material according to claim 1 , wherein at least a part of the protective film-forming agent is solid having a mean particle size of at most 100 μm.

3. The concentrated metal-polishing liquid material according to claim 1 , wherein the protective film-forming agent is at least one selected from the group consisting of benzotriazole, 4-hydroxybenzotriazole, 4-carboxy-1H-benzotriazole butyl ester, tolyltriazole, and naphthotriazole.

4. The concentrated metal-polishing liquid material according to claim 1 , wherein said concentrated metal-polishing liquid material is more concentrated than a concentration thereof in a metal-polishing liquid used in metal polishing.

5. The concentrated metal-polishing liquid material according to claim 1 , wherein said concentrated metal-polishing liquid material is more concentrated 10-fold or more than a concentration thereof in a metal-polishing liquid used in metal polishing.

6. A concentrated metal-polishing liquid material comprising an ingredient group of a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water,

wherein the protective film-forming agent is an azole compound,

wherein a water content of the concentrated metal-polishing liquid material is between 75 and 98% by weight,

wherein the dissolution promoter is a liquid organic solvent for the protective film-forming agent and has a property that it increases dissolution of the protective film-forming agent in water, solubility of the protective film-forming agent in the dissolution promoter being at least 40 g/liter, and the dissolution promoter is included in the liquid material in an amount so as to dissolve all of the protective film-forming agent, and

wherein said concentrated metal-polishing liquid material is to be diluted with a diluent, to form a metal-polishing liquid, and used with an oxidized-metal etchant and oxidizer.

7. The concentrated metal-polishing liquid material according to claim 1 , wherein an amount of the organic solvent included in the liquid material is less than 50 g relative to 100 g of the total amount of the liquid material.

8. The concentrated metal-polishing liquid material according to claim 6 , wherein an amount of the organic solvent included in the liquid material is less than 50 g relative to 100 g of the total amount of the liquid material.

9. The concentrated metal-polishing liquid material according to claim 1 , wherein said concentrated metal-polishing liquid material contains no solid abrasive grains.

10. The concentrated metal-polishing liquid material according to claim 6 , wherein said concentrated metal-polishing liquid material contains no solid abrasive grains.

11. The concentrated metal-polishing liquid material according to claim 6 , wherein said dissolution promoter is at least one of alcohols, ethers and ketones.

12. The concentrated metal-polishing liquid material according to claim 1 , wherein said dissolution promoter is included in the liquid material in an amount so as to dissolve all of the protective film-forming agent.

13. The concentrated metal-polishing liquid material according to claim 1 , wherein said dissolution promoter is selected from the group consisting of methanol, ethanol, 2-propanol, tetrahydrofuran, ethylene glycol, acetone and methyl ethyl ketone.

14. The concentrated metal-polishing liquid material according to claim 1 , wherein the solubility of the protective film-forming agent in the liquid organic solvent is at least 50 g/liter.

15. The concentrated metal-polishing liquid material according to claim 1 , wherein said water content is between 80 and 98% by weight.

16. The concentrated metal-polishing liquid material according to claim 6 , wherein said water content is between 80 and 98% by weight.

17. The concentrated metal-polishing liquid material according to claim 1 , further containing the oxidized-metal etchant, and wherein the liquid material consists of the protective film-forming agent, the dissolution promoter for the protective film-forming agent, the oxidized-metal etchant and water.

18. The concentrated metal-polishing liquid material according to claim 6 , further containing the oxidized-metal etchant, and wherein the liquid material consists of the protective film-forming agent, the dissolution promoter for the protective film-forming agent, the oxidized-metal etchant and water.

Assignments (2)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2015
From: HITACHI, LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 035249/0082 →