Wiring for display device and thin film transistor array panel including the same and method for manufacturing thereof
A method of manufacturing a thin film transistor array panel, comprising forming a first signal line on a substrate, forming a gate insulating layer and a semiconductor layer on the first signal line in sequence, forming a second signal line on the gate insulating layer and the semiconductor layer, and forming a pixel electrode connected to the second signal layer. At least one of the first signal line and the second line comprise a first conductive oxide layer, a conductive layer containing silver (Ag), and a second conductive oxide layer formed at a lower temperature than that of the first conductive oxide layer.
1 . Wiring for a display device, comprising:
a first conductive layer comprising a first polycrystalline conductive oxide;
a second conductive layer comprising silver (Ag); and
a third conductive layer comprising a second polycrystalline conductive oxide formed from an amorphous conductive oxide.
2 . Wiring for a display device of claim 1 , wherein the first polycrystalline conductive oxide is polycrystalline ITO.
3 . Wiring for a display device of claim 1 , wherein the amorphous conductive oxide is amorphous ITO or IZO.
4 . Wiring for a display device of claim 1 , wherein the third conductive layer is formed by crystallizing an amorphous conductive oxide.
5 . Wiring for a display device, comprising:
a first conductive layer comprising a first conductive oxide;
a second conductive layer comprising Ag formed on the first conductive layer; and
a third conductive layer formed on the second layer, the third conductive layer comprising a second conductive oxide,
wherein the first conductive layer and the third conductive layer are formed at different temperatures from each other.
6 . Wiring for a display device of claim 5 , wherein the third conductive layer is formed at a lower temperature than the first conductive layer.
7 . A thin film transistor array panel comprising:
a substrate;
a first signal line and a second signal line formed on the substrate, the first signal line and the second signal line intersecting each other;
a thin film transistor connected to the first signal line and the second signal line; and
a pixel electrode connected to the thin film transistor,
wherein at least one of the first signal line and the second signal line comprises a first conductive layer comprising a first polycrystalline conductive oxide, a second conductive layer comprising silver (Ag), and a third conductive layer comprising a second polycrystalline conductive oxide formed from an amorphous conductive oxide.
8 . The thin film transistor array panel of claim 7 , wherein the first polycrystalline conductive oxide is polycrystalline ITO.
9 . The thin film transistor array panel of claim 7 , wherein the third conductive layer is formed by crystallizing an amorphous conductive oxide.
10 . The thin film transistor array panel of claim 7 , wherein the first conductive layer and the third conductive layer are formed at different temperatures from each other.
11 . The thin film transistor array panel of claim 10 , wherein the third conductive layer is formed at a lower temperature than that of the first conductive layer.
12 . The thin film transistor array panel of claim 7 , wherein the second conductive layer is thicker than the first conductive layer and the third conductive layer.
13 . A manufacturing method of a thin film transistor array panel, comprising:
forming a first signal line on a substrate;
forming a gate insulating layer and a semiconductor layer on the first signal line in sequence;
forming a second signal line on the gate insulating layer and the semiconductor layer; and
forming a pixel electrode connected to the second signal layer,
wherein at least one of the formation of the first signal line and the formation of the second line comprises forming a first conductive oxide layer, forming a conductive layer containing silver (Ag), and forming a second conductive oxide layer at a lower temperature than the first conductive oxide layer.
14 . The method of claim 13 , wherein the formation of the first conductive oxide layer is performed at a temperature of over 150° C.
15 . The method of claim 13 , wherein the formation of the second conductive oxide layer is performed at a temperature of 25 to 150° C.
16 . The method of claim 15 , wherein the formation of the second conductive oxide layer is performed at room temperature.
17 . The method of claim 13 , wherein a step of etching the first conductive oxide layer, the conductive layer containing silver (Ag), and the second conductive oxide layer simultaneously is further comprised after the formation of the second conductive oxide layer.
18 . The method of claim 17 , wherein the etching is performed by wet etching.
19 . The method of claim 13 , wherein the formation of the second conductive oxide layer comprises exposing the second conductive oxide layer to at least one selected from among oxygen gas (O2), hydrogen gas (H2), and water vapor (H2O).
20 . The method of claim 19 , wherein the formation of the second conductive oxide layer comprises exposing the second conductive oxide layer to nitrogen-containing gas.