IP Library Granted Patent US 7,585,701
Granted Patent B2
US 7,585,701 · App. 11/439,425 · Granted Sep 8, 2009

Carrier sheet with adhesive film and method for producing semiconductor devices using the carrier sheet with adhesive film

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Quick Facts
Patent No.
US 7,585,701
App. No.
11/439,425
Granted
Sep 8, 2009
Kind
B2
Abstract

A carrier sheet with an adhesive film includes a heat-resistant base film with an upper side and an underside, and a thermoactive adhesive layer arranged on the underside of the base film and oriented toward the carrier sheet. The upper side of the base film includes an adhesive layer with semiconductor chips fixed on it, the semiconductor chips being surrounded by deactivated regions of the adhesive layer of the film upper side.

Claims (17)

1. A method for producing semiconductor devices with a carrier sheet with adhesive film, wherein each of the semiconductor devices includes a plastic package with a semiconductor chip, the method comprising:

producing a semiconductor wafer including a plurality of semiconductor chips that are arranged in rows and columns and include active upper sides and back sides, wherein the active upper sides are provided with contact areas;

separating the semiconductor wafer into individual semiconductor chips;

producing a carrier sheet including a double-sided adhesive film applied to an upper side of the carrier sheet, wherein the adhesive film includes a thermoactive film underside and a film upper side, the film underside is adhesively fixed on the upper side of the carrier sheet, and the film upper side remains freely accessible and includes semiconductor device positions arranged in rows and columns;

loading the freely accessible film upper side with the individual semiconductor chips, wherein the individual semiconductor chips are arranged with the active upper sides of the semiconductor chips on the film upper side of the adhesive film in the semiconductor device positions;

forming deactivated portions of the film upper side that are not covered with semiconductor chips so as to reduce the adhesive effect of the deactivated portions;

applying a plastic package molding compound film upper side so as to embed the semiconductor chips in the plastic package molding compound and to form a panel with a coplanar surface that includes the plastic package molding compound and active upper sides of the semiconductor chips;

removing the carrier sheet from the thermoactive film underside of the double-sided adhesive film, and subsequently removing the double-sided adhesive film from the coplanar surface;

forming a panel by applying to the coplanar surface a wiring structure with external contact areas and with interconnects from contact areas of the semiconductor chips to the external contact areas; and

separating the panel into individual semiconductor devices.

2. The method of claim 1 , wherein the double-sided adhesive film comprises adhesive layers that are applied to a heat-resistant base film, and the base film comprises one of polyethylene terephthalate and an ethylene-modified polytetrafluoroethylene.

3. The method of claim 1 , wherein the double-sided adhesive film comprises a heat-resistant base film with acrylic-containing adhesive applied on each opposing side of the base film.

4. The method of claim 1 , wherein wherein the double-sided adhesive film comprises a heat-resistant base film, and the base film includes a thermoactive adhesive film on the film underside oriented toward the carrier sheet and a pressure-sensitive film on the film upper side oriented toward the semiconductor chips.

5. The method of claim 1 , wherein the double-sided adhesive film comprising a heat-resistant base film including an adhesive photoresist applied as the adhesive layer to an upper side of the base film.

6. The method of claim 1 , wherein the deactivated portions are formed by irradiating with UV rays the portions of the film upper side that are not covered by semiconductor chips.

7. The method of claim 1 , wherein the deactivated portions are formed by treated the portions of the film upper side that are not covered by semiconductor chips with plasma, the plasma including at least one gas selected from the group consisting of argon, helium, hydrogen, oxygen, tetrafluoromethane and sulfur hexafluoride.

8. The method of claim 1 , wherein the external contact areas are loaded with external contacts before separation of the panel.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2022
From: INTEL DEUTSCHLAND GMBH
To: INTEL CORPORATION
Reel/Frame 061356/0001 →
CHANGE OF NAME Recorded Nov 6, 2015
From: INTEL MOBILE COMMUNICATIONS GMBH
To: INTEL DEUTSCHLAND GMBH
Reel/Frame 037057/0061 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2012
From: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
To: INTEL MOBILE COMMUNICATIONS GMBH
Reel/Frame 027556/0709 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2012
From: INFINEON TECHNOLOGIES AG
To: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
Reel/Frame 027548/0623 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 7, 2006
From: BEER, GOTTFRIED; BRUNNBAUER, MARKUS; POEPPEL, IRMGARD ESCHER-; FUERGUT, EDWARD
To: INFINEON TECHNOLOGIES AG
Reel/Frame 018064/0529 →