Array substrate for liquid crystal display device and manufacturing method thereof

1. A method of fabricating a liquid crystal display device having an array substrate, comprising:

forming a gate line on a substrate;

forming a data line crossing the gate line and defining a pixel area;

forming a thin film transistor connected to the gate line and the data line, the thin film transistor having a gate electrode connected to the gate line, a source electrode over the gate electrode and connected to the data line, a drain electrode spaced apart from the source electrode, and a semiconductor layer having an active layer over the gate electrode, a first extended portion and a neck region connecting the active layer and the first extended portion, wherein the first extended portion and the neck region correspond to the drain electrode, and wherein both sides of the neck region are completely covered with the drain electrode and parallel to an extended direction of the drain electrode toward the source electrode; and

forming a pixel electrode in the pixel area, the pixel electrode electrically connected to the drain electrode.

2. The method according to claim 1 , wherein the source electrode has a U-shape and surrounds a part of the drain electrode.

3. The method according to claim 2 , wherein the part of the drain electrode has a rod shape.

4. The method according to claim 1 , further comprising a second extended portion corresponding to the data line in the semiconductor layer.

5. The method according to claim 1 , wherein the semiconductor layer is formed of amorphous silicon.

6. The method according to claim 1 , wherein the first extended portion at the boundary with the active layer has a width narrower than the active layer.

7. The method according to claim 6 , wherein the width of the first extended portion at the boundary with the active layer is in a range of about 2.8 μm to 3.4 μm.

8. The method according to claim 7 , wherein the drain electrode completely covering the first extended portion at the boundary with the active layer has a width in a range of about 4.5 μm to 5.6 μm.

9. The method according to claim 1 , further comprising a doped semiconductor layer between the semiconductor layer and the source electrode, and between the semiconductor layer and the drain electrode in the thin film transistor.

10. The method according to claim 9 , wherein the doped semiconductor layer is formed of doped amorphous silicon.

11. A method of fabricating for a liquid crystal display device having an array substrate, comprising:

forming a gate line and a gate electrode on a substrate;

forming a gate insulating layer on the gate line and the gate electrode;

forming a semiconductor layer on the gate insulating layer, the semiconductor layer having an active layer over the gate electrode, a first extended portion and a neck region connecting the active layer and the first extended portion;

forming a data line, a source electrode, and a drain electrode on the semiconductor layer, the data line crossing the gate line and defining a pixel area, the source electrode disposed over the gate electrode and connected to the data line, the drain electrode spaced apart from the source electrode, wherein the first extended portion and the neck region correspond to the drain electrode, and wherein the drain electrode completely covers the both sides of the neck region parallel to an extended direction of the drain electrode toward the source electrode;

forming a passivation layer on the data line, the source electrode, and the drain electrode; and

forming a pixel electrode in the pixel area on the passivation layer, the pixel electrode connected to the drain electrode.