Method for manufacturing copper wires on substrate of flat panel display device
A method for manufacturing copper wires on a substrate for a flat panel display device is disclosed. The method comprises following steps: providing a substrate; forming a seed layer on the surface; forming a patterned photoresist on the surface of the seed layer to expose a part of the seed layer; and plating a copper layer on the exposed part of the seed layer. As the copper layer is plated, an electrolyte solution comprises a sulfur-containing compound is used. The angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree. Through the method illustrated above, the film step-coverage in the following process can be improved, the generated voids in device can be reduced, the manufacturing steps can be simplified, and the complicated etching process can be avoided.
1. A method for manufacturing copper wires on a substrate of a display device comprising the following steps:
(a) providing a substrate;
(b) forming a seed layer on the surface of the substrate;
(c) forming a patterned photoresist layer on the surface of the seed layer to expose a part of the seed layer; and
(d) plating a copper layer on the exposed part of the seed layer with an electrolyte solution comprising a sulfur-containing compound;
wherein the angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree.
2. The method as claimed in claim 1 , further comprising step (e) removing the photoresist layer after plating the copper layer in step (d).
3. The method as claimed in claim 1 , wherein the patterned photoresist layer is formed through depositing photoresist layer on the surface of the seed layer, and patterning the photoresist by photolithography in step (c).
4. The method as claimed in claim 1 , wherein the seed layer is formed by physical vapor deposition, chemical vapor deposition, evaporation, sputtering, electroplating or electroless deposition in step (b).
5. The method as claimed in claim 1 , wherein the electrolyte solution further comprises a polyol.
6. The method as claimed in claim 5 , wherein the polyol is polyethylene glycol, polypropylene glycol, polybutylene glycol, or the combination thereof.
7. The method as claimed in claim 1 , wherein the sulfur-containing compound is an organic sulfide surfactant.
8. The method as claimed in claim 7 , wherein the sulfur-containing compound is an alkyl sulfonate having disulfide groups.
9. The method as claimed in claim 1 , further comprising step (a1) forming a first barrier layer on the surface of the substrate after the substrate is provided in step (a).
10. The method as claimed in claim 9 , wherein at least one material of the first barrier layer is selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, titanium nitride, indium-tin oxide, silicon carbide, nitrogen and oxygen doped silicon carbide, molybdenum, chromium, titanium, nickel, tungsten, ruthenium, cobalt, and phosphorus.
11. The method as claimed in claim 1 , further comprising step (d1) forming a second barrier layer on the surface of the copper layer after the copper layer is plated in step (d).
12. The method as claimed in claim 11 , wherein at least one material of the second barrier layer is selected from of the group consisting of silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, titanium nitride indium-tin oxide, silicon carbide, nitrogen and oxygen doped silicon carbide, molybdenum, chromium, titanium, nickel, tungsten, ruthenium, cobalt, and phosphorus.
13. The method as claimed in claim 11 , wherein the second barrier layer is formed by physical vapor deposition, chemical vapor deposition, evaporation, sputtering, electroplating, or electroless deposition.
14. The method as claimed in claim 1 , wherein the angle between the surface of the copper layer and the contact surface of the seed layer is greater than 10 degree and less than 80 degree.
15. The method as claimed in claim 1 , wherein at least one material of the seed layer is selected from of the group consisting of gold, silver, copper, nickel, tungsten, molybdenum, cobalt, ruthenium, titanium, zirconium, hafnium, niobium, tantalum, vanadium, chromium, manganese, iron, palladium, platinum, and aluminum.
16. The method as claimed in claim 1 , wherein the photoresist layer is positive photoresist layer, or negative photoresist layer.
17. The method as claimed in claim 1 , wherein the copper layer is plated by electroplating, or electroless deposition.
18. The method as claimed in claim 1 , wherein the substrate is a silicon substrate, a glass substrate, or a plastic substrate.
19. The method as claimed in claim 1 , wherein two angles between the surface of the copper layer and the contact surface of the seed layer are located at the lateral side of the copper layer, and are greater than 0 degree and less than 90 degree.
20. The method as claimed in claim 19 , wherein the angles are greater than 10 degree and less than 80 degree.