Solid state microwave power amplifier
A power amplifier (power amplifier) having multiple solid state sub-amplifiers connected in parallel between the power amplifier input and the power amplifier output are described. The signal input to the power amplifier is provided to an RF splitter connected between the power amplifier input connector and the input of each of the sub-amplifiers. The RF splitter splits the input power from the signal input and provides the power to the sub-amplifier inputs through input electrical paths. The input electrical paths from the power amplifier input to the sub-amplifiers are substantially physically identical. Each of the sub-amplifiers drive an input of an RF combiner connected between the outputs of the sub-amplifiers and the output of the power amplifier. The RF combiner combines the output power from each of the sub-amplifiers through output electrical paths, and provides the combined power to the power amplifier output. The output electrical paths from the sub-amplifiers to the power amplifier output are substantially physically identical.
1. An RF power amplifier, comprising:
an RF input connection;
an RF output connection;
at least three sub-amplifier modules;
a plurality of input electrical paths connecting each of the sub-amplifier modules to the input connection, wherein at least a portion of each of the plurality of input electrical paths collectively and substantially define an input path plane; and
a plurality of output electrical paths connecting each of the sub-amplifier modules to the output connection, wherein at least a portion of each of the plurality of output electrical paths collectively and substantially define an output path plane, and wherein the electrical paths of at least one of the plurality of input electrical paths and the plurality of output electrical paths are substantially identical, and at least one of the input connection and the output connection is substantially parallel to at least one of the input path plane and the output path plane;
at least two sub-amplifier substrates defining at least two different planes, wherein at least one sub-amplifier is mounted on each sub-amplifier substrate;
a power substrate defining a plane different than any of the planes defined by the sub-amplifier substrates, wherein the power substrate comprises electrical connectors configured to connect the sub-amplifier modules to a power source, and wherein the sub-amplifier substrates and the power substrate are connected to one another so as to form a housing comprising a central cavity; and
sequencing circuitry positioned within the cavity, wherein the sequencing circuitry is configured to control a sequence of applied power signals to one or more of the sub-amplifier modules.
2. The amplifier of claim 1 , further comprising mounting screws configured to attach the sequencing circuitry to at least one of the sub-amplifier substrates, wherein each of the mounting screws are electrically conductive and provide a power connection from the sequencing circuitry to at least one of the sub-amplifier modules.
3. The amplifier of claim 2 , wherein the at least one sub-amplifier module is mounted on the opposite side of the at least one sub-amplifier substrate from the sequencing circuitry.
4. The amplifier of claim 2 , wherein the screw comprises an electrical filter.
5. The amplifier of claim 2 , wherein the screw comprises a surface configured to receive a wire bond.
6. An RF power amplifier, comprising:
an RF input connection;
an RF output connection;
at least three sub-amplifier modules;
a plurality of input electrical paths connecting each of the sub-amplifier modules to the input connection, wherein at least a portion of each of the plurality of input electrical paths collectively and substantially define an input path plane; and
a plurality of output electrical paths connecting each of the sub-amplifier modules to the output connection, wherein at least a portion of each of the plurality of output electrical paths collectively and substantially define an output path plane, and wherein the electrical paths of at least one of the plurality of input electrical paths and the plurality of output electrical paths are substantially identical, and at least one of the input connection and the output connection is substantially parallel to at least one of the input path plane and the output path plane;
a pre-amp configured to drive the input connection;
one of four, six, eight, and ten sub-amplifier substrates, each defining a different plane, wherein at least two sub-amplifiers are mounted on each sub-amplifier substrate; and
an input driver amplifier substrate defining an input driver amplifier plane different than any of the planes defined by the sub-amplifier substrates, wherein the input driver amplifier is mounted on the input driver amplifier substrate.
7. An RF power amplifier, comprising:
an RF input connection;
an RF output connection;
at least three sub-amplifier modules;
a plurality of input electrical paths connecting each of the sub-amplifier modules to the input connection, wherein at least a portion of each of the plurality of input electrical paths collectively and substantially define an input path plane; and
a plurality of output electrical paths connecting each of the sub-amplifier modules to the output connection, wherein at least a portion of each of the plurality of output electrical paths collectively and substantially define an output path plane, and wherein the electrical paths of at least one of the plurality of input electrical paths and the plurality of output electrical paths are substantially identical, and at least one of the input connection and the output connection is substantially parallel to at least one of the input path plane and the output path plane, wherein each of the sub-amplifier modules comprises a control signal input configured to adjust electrical characteristics of the sub-amplifier module.
8. The amplifier of claim 7 , wherein the control signal is configured to adjust
a gate bias voltage of the sub-amplifier.