Wavelength tunable optical transmitter and optical transceiver
View Patent ↗A wavelength tunable laser module for DWDM is used, in which a single electroabsorption modulator integrated laser is mounted and an oscillation wavelength is made tunable by temperature control. Driving conditions of a laser and a modulator are determined such that they have approximately the same modulation and transmission characteristics in a temperature control range. Such an electroabsorption modulator integrated laser is used and the driving conditions are incorporated, thereby a small, inexpensive wavelength tunable optical transmitter can be provided.
1. A wavelength tunable optical transmitter, comprising:
a single electroabsorption modulator integrated laser having an electroabsorption modulator and a semiconductor laser integrated on a substrate;
a temperature control section for controlling a temperature of the electroabsorption modulator integrated laser and continuously outputting a device temperature corresponding to the temperature of the electroabsorption modulator integrated laser;
a laser drive section for driving the semiconductor laser based on the device temperature output by the temperature control section, and for storing data of driving currents for an arbitrary temperature; and
a modulator drive section for driving the electroabsorption modulator based on the device temperature output by the temperature control section, and for storing data of reverse voltages and voltage amplitudes for the arbitrary temperature,
wherein said temperature control section changes the temperature of the electroabsorption modulator integrated laser so that an oscillation wavelength of the semiconductor laser is made tunable within a wavelength range of 3 nm or more; and
wherein said laser drive section and said modulator drive section drive a driving current of the semiconductor laser and reverse voltage and amplitude voltage of the electroabsorption modulator continuously and respectively such that the electroabsorption modulator integrated laser has approximately the same optical output, modulation and transmission characteristics in the predetermined wavelength range.
2. A wavelength tunable optical transmitter, comprising:
a single electroabsorption modulator integrated laser having an electroabsorption modulator and a semiconductor laser integrated on a substrate;
a temperature control section for controlling temperature of the electroabsorption modulator integrated laser and continuously outputting a device temperature corresponding to the temperature of the electroabsorption modulator integrated laser;
a laser drive section for driving the semiconductor laser based on the device temperature output by the temperature control section, and for storing data of driving currents for an arbitrary temperature; and
a modulator drive section for driving the electroabsorption modulator based on the device temperature output by the temperature control section, and for storing data of reverse voltages and voltage amplitudes for the arbitrary temperature,
wherein said laser drive section changes a current applied to the semiconductor laser depending on temperature within a temperature range of difference in temperature of 30° C. or more provided by the temperature control section, and
wherein said modulator drive section changes amplitude voltage of a high frequency signal applied to the electroabsorption modulator and reverse voltage applied to the electroabsorption modulator depending on temperature within the temperature range.
3. The wavelength tunable optical transmitter according to claim 1 ,
wherein said electroabsorption modulator comprises a multiple quantum well with indium-gallium-aluminum-arsenic as a material.
4. The wavelength tunable optical transmitter according to claim 2 ,
wherein said electroabsorption modulator comprises a multiple quantum well with indium-gallium-aluminum-arsenic as a material.
5. The wavelength tunable optical transmitter according to claim 1 ,
wherein said electroabsorption modulator comprises a multiple quantum well with indium-gallium-arsenic-phosphorous as a material.
6. The wavelength tunable optical transmitter according to claim 2 ,
wherein said electroabsorption modulator comprises a multiple quantum well with indium-gallium-arsenic-phosphorous as a material.
7. The wavelength tunable optical transmitter according to claim 1 ,
wherein said semiconductor laser is a distributed feedback laser diode or a distributed Bragg reflector laser diode.
8. The wavelength tunable optical transmitter according to claim 2 ,
wherein said semiconductor laser is a distributed feedback laser diode or a distributed Bragg reflector laser diode.
9. The wavelength tunable optical transmitter according to claim 1 ,
wherein said electroabsorption modulator integrated laser is operated at a transmission rate of 2.5 Gbits/sec or more.
10. The wavelength tunable optical transmitter according to claim 2 ,
wherein said electroabsorption modulator integrated laser is operated at a transmission rate of 2.5 Gbits/sec or more.
11. An optical transceiver comprising:
a wavelength tunable optical transmitter including:
a wavelength tunable laser module mounted with a single electroabsorption modulator integrated laser having an electroabsorption modulator and a semiconductor laser integrated on a semiconductor substrate, and a temperature control section for controlling a temperature of the electroabsorption modulator integrated laser and continuously outputting a device temperature corresponding to the temperature of the electroabsorption modulator integrated laser,
a laser drive section for driving the semiconductor laser based on the device temperature output by the temperature control section, and for storing data of driving currents for an arbitrary temperature, and
a modulator drive section for driving the electroabsorption modulator based on the device temperature output by the temperature control section, and for storing data of reverse voltages and voltage amplitudes for the arbitrary temperature; and
an optical receiver including an optical receiver module for converting a received optical signal into an electric signal,
wherein said temperature control section changes the temperature of the electroabsorption modulator integrated laser so that an oscillation wavelength of the semiconductor laser is made tunable within a wavelength range of 3 nm or more; and
wherein said laser drive section and said modulator drive section drive a driving current of the semiconductor laser and reverse voltage and amplitude voltage of the electroabsorption modulator continuously and respectively such that the electroabsorption modulator integrated laser has approximately the same optical output, modulation and transmission characteristics in the predetermined wavelength range.
12. An optical transceiver comprising:
a wavelength tunable optical transmitter including:
a wavelength tunable laser module mounted with a single electroabsorption modulator integrated laser having an electroabsorption modulator and a semiconductor laser integrated on a semiconductor substrate, and a temperature control section for controlling a temperature of the electroabsorption modulator integrated laser and continuously outputting a device temperature corresponding to the temperature of the electroabsorption modulator integrated laser,
a laser drive section for driving the semiconductor laser based on the device temperature output by the temperature control section, and for storing data of driving currents for an arbitrary temperature, and
a modulator drive section for driving the electroabsorption modulator based on the device temperature output by the temperature control section, and for storing data of reverse voltages and voltage amplitudes for the arbitrary temperature; and
an optical receiver including an optical receiver module for converting a received optical signal into an electric signal,
wherein said laser drive section changes a current applied to the semiconductor laser depending on temperature within a temperature range of difference in temperature of 30° C. or more provided by the temperature control section; and
wherein said modulator drive section changes amplitude voltage of a high frequency signal applied to the electroabsorption modulator and reverse voltage applied to the electroabsorption modulator depending on a temperature within the temperature range.