Etchant composition, methods of patterning conductive layer and manufacturing flat panel display device using the same
View Patent ↗An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid, nitric acid, acetic acid, water and an additive, wherein the additive includes a chlorine-based compound, a nitrate-based compound, and an oxidation regulator. In addition, the flat panel display device may be manufactured by patterning a gate electrode, source/drain electrodes and a pixel electrode using the same etchant composition. The gate electrode, source/drain electrodes and the pixel electrode may be formed of different conductive materials. Accordingly, processes are simplified so that manufacturing costs may be reduced and productivity may be improved.
1. A method of manufacturing a flat panel display device, comprising:
providing a substrate;
forming a first conductive layer on the substrate;
patterning the first conductive layer to form a gate electrode;
forming a gate insulating layer on the gate electrode;
forming a semiconductor layer on the gate insulating layer corresponding to the gate electrode;
forming a second conductive layer on the semiconductor layer;
patterning the second conductive layer to form source/drain electrodes;
forming a passivation layer over an entire surface of the substrate including the source/drain electrodes, wherein the passivation layer has a contact hole exposing a portion of the drain electrode; and
forming a third conductive layer on the passivation layer to be electrically connected to the drain electrode through the contact hole;
and patterning the third conductive layer to form a pixel electrode,
wherein the gate electrode, the source/drain electrodes and the pixel electrode are patterned using the same etchant composition; and
wherein the etchant composition comprises phosphoric acid having a concentration of about 40 to 70 wt %, nitric acid having a concentration of about 3 to 15 wt %, acetic acid having a concentration of about 5 to 35 wt %, a chlorine-based compound having a concentration of about 0.02 to 5 wt %, a nitrate-based compound having a concentration of about 0.05 to 5 wt %, a sulfate-based compound having a concentration of about 0.05 to 5 wt %, an oxidation regulator having a concentration of about 1 to 10 wt %, and a residual quantity of water.
2. The method according to claim 1 , wherein the chlorine-based compound is at least one selected from the group consisting of KCl, HCl, LiCl, NaCl, NH 4 Cl, CuCl 2 , FeCl 3 , FeCl 2 , CaCl 2 , CoCl 2 , NiCl 2 , ZnCl 2 , AlCl 3 , BaCl 2 , BeCl 2 , BiCl 3 , CdCl 2 , CeCl 2 , CsCl 2 , CrCl 3 and H 2 PtCl 3 .
3. The method according to claim 1 , wherein the nitrate-based compound is at least one selected from the group consisting of NH 4 NO 3 , KNO 3 , LiNO 3 , Ca(NO 3 ) 2 , NaNO 3 , Zn(NO 3 ) 2 , Co(NO 3 ) 2 , Ni(NO 3 ) 2 , Fe(NO 3 ) 3 , Cu(NO 3 ) 2 and Ba(NO 3 ) 2 .
4. The method according to claim 1 , wherein the sulfate-based compound is at least one selected from the group consisting of H 2 SO 4 , Na 2 SO 4 , Na 2 S 2 O 8 , K 2 SO 4 , K 2 S 2 O 8 , CaSO 4 , (NH 4 ) 2 SO 4 and (NH 4 ) 2 S 2 O 8 .
5. The method according to claim 1 , wherein the oxidation regulator is at least one selected from the group consisting of KMnO 4 , K 2 CrO 7 , NaClO, NaClO 2 , NaClO 3 , NaClO 4 , HClO 4 and HIO 4 .
6. The method according to claim 1 , wherein the first conductive layer is a single layer formed of at least one of Al, AlNd alloy, Mo, and ITO, or a multilayer thereof.
7. The method according to claim 1 , wherein the second conductive layer is a single layer formed of at least one of Al, AlNd alloy, Mo, and ITO, or a multilayer thereof.
8. The method according to claim 1 , wherein the third conductive layer is formed of ITO.
9. The method according to claim 1 , wherein the flat display device is a liquid crystal display device or an organic electroluminescence display device.