AlGaInN-based lasers produced using etched facet technology
View Patent ↗A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE.
1. A nitride based semiconductor laser, comprising:
a substrate;
an epitaxial AlGaInN-based structure on said substrate, said structure containing an active region and further including:
a first dry etched facet
a second dry etched facet;
a dry etched ridge waveguide formed along a top surface of said epitaxial AlGaInN-based structure above said active region for providing lateral waveguiding for said laser, said ridge waveguide located between said first and second etched facets;
wherein said first dry etched facet is formed at and extends across a first end of said epitaxial AlGaInN-based structure and said ridge waveguide in a single plane at or around 90-degrees to said substrate; and
wherein said first etched facet, said second dry etched facet and said dry etched ridge waveguide are each formed in a dry etching system containing an ion beam source generating an ion beam directed towards said substrate.
2. The nitride based semiconductor laser of claim 1 , wherein the second facet is at or around 90-degrees to said substrate.
3. The nitride device of claim 1 , wherein the second facet is at or about 45-degrees to the substrate.
4. A nitride based semiconductor laser, comprising:
a substrate;
an epitaxial AlGaInN-based structure on said substrate, said structure containing an active region and further including:
a first dry etched facet;
a second dry etched facet;
a dry etched ridge waveguide formed along a top surface of said epitaxial AlGaInN-based structure above said active region for providing lateral waveguiding for said laser, said ridge waveguide located between said first and second etched facets;
a p-doped cap layer formed on top of said ridge waveguide;
a dielectric disposed above the ridge waveguide and covering said p-doped cap layer; and
an opening in said dielectric which exposes said p-doped cap layer, said opening being formed by both dry etching and wet etching to avoid damaging said p-doped cap layer.
5. The nitride based semiconductor laser of claim 4 , wherein said dielectric completely encapsulates said etched facets.
6. The nitride based semiconductor laser of claim 4 , further including a contact deposited on said cap layer.
7. The nitride based semiconductor laser of claim 4 , wherein the length of the ridge waveguide between said first and second facets is 100 μm or less.
8. A semiconductor photonic device, comprising:
a substrate;
an epitaxial A 1 GaInN-based structure on said substrate, said structure containing an active region;
a first dry etched facet;
a dry etched ridge waveguide formed along a top surface of said epitaxial AlGaInN-based structure above said active region for providing lateral waveguiding; and
wherein said first dry etched facet is formed at and extends across a first end of said epitaxial AlGaInN-based structure and said ridge waveguide in a single plane at or around 90-degrees to said substrate.
9. The photonic device of claim 8 , further comprising a second dry etched facet.
10. The photonic device of claim 9 , wherein said second facet is at or around 90-degrees to the substrate.
11. The photonic device of claim 9 , wherein said second facet is at or around 45-degrees to the substrate.
12. The photonic device of claim 9 , wherein the length of the ridge waveguide between said first and second facets is 100 μm or less.
13. A semiconductor photonic device, comprising:
a substrate;
an epitaxial AlGaInN-based structure on said substrate, said structure containing an active region and further including:
a first dry etched facet;
a dry etched ridge waveguide formed along a top surface of said epitaxial AlGaInN-based structure above said active region for providing lateral waveguiding;
a p-doped cap layer formed on top of said ridge waveguide;
a dielectric disposed above the ridge waveguide and covering said p-doped cap layer; and
an opening in said dielectric which exposes said p-doped cap layer, said opening being formed by both dry etching and wet etching to avoid damaging said p-doped cap layer.
14. The photonic device of claim 13 , wherein said dielectric completely encapsulates said etched facet.
15. The photonic device of claim 13 , further including a contact deposited on said cap layer.
16. The photonic device of claim 13 , further comprising a second dry etched facet.
17. The photonic device of claim 16 , wherein said dielectric completely encapsulates said etched facets.