Liquid crystal display
View Patent ↗A liquid crystal display device includes first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries, wherein the first thin film transistor has a first channel direction different from a first grain boundary direction of the first grain boundaries, and a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries, wherein the second thin film transistor has a second channel direction parallel to a second grain boundary direction of the second grain boundaries, wherein the first and second transistors have a substantially same electrical characteristic.
1. A liquid crystal display device, comprising:
a first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries, wherein the first thin film transistor has a first channel direction different from a first grain boundary direction of the first grain boundaries; and
a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries, wherein the second thin film transistor has a second channel direction parallel to a second grain boundary direction of the second grain boundaries, wherein the first and second transistors have a substantially same electrical characteristic.
2. The liquid crystal display device according to claim 1 , wherein the substantially same electrical characteristic is at a same threshold voltage for both the first and second thin film transistors.
3. The liquid crystal display device according to claim 2 , wherein the substantially same electrical characteristic is on-current.
4. The liquid crystal display device according to claim 1 , wherein the first channel direction is at a right angle with respect to the first grain boundary direction.
5. The liquid crystal display device according to claim 1 , wherein the first channel direction is at 45° angle with respect to the first grain boundary direction.
6. The liquid crystal display device according to claim 1 , wherein the first and second grain boundary directions are in a same direction.
7. The liquid crystal display device according to claim 1 , wherein a ratio of a channel width to a channel length of the first thin film transistor satisfies a mathematical formula of (W/L)=(Id/Idp)*(Wp/Lp), where W is a channel width of the first thin film transistor, L is a channel length of the first thin film transistor, Id is an on-current of the first thin film transistor, Idp is an on-current of the second thin film transistor, Wp is a channel width of the second thin film transistor, and Lp is a channel length of the second thin film transistor.
8. The liquid crystal display device according to claim 1 , further comprising a third thin film transistor with a third polysilicon active layer in which a third channel area has third grain boundaries, wherein the third thin film transistor has a third channel direction different than a third grain boundary direction of the third grain boundaries, wherein the first, second and third transistors have a substantially same electrical characteristic at a same threshold voltage.
9. The liquid crystal display device according to claim 8 , wherein the similar characteristic is on-current.
10. The liquid crystal display device according to claim 8 , wherein the first channel direction is at a right angle with respect to the first grain boundary direction and the third channel direction is at 45° angle with respect to the third grain boundary direction.
11. The liquid crystal display device according to claim 8 , wherein the first, second, and third grain boundaries are in a same direction.
12. A liquid crystal display device, comprising:
a first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries at a first grain boundary direction, wherein the first thin film transistor has a first channel direction different from the first grain boundary direction; and
a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries in the first grain boundary direction, wherein the second thin film transistor has a second channel direction parallel to the first grain boundary direction, wherein the first and second transistors have a substantially similar electrical characteristic.
13. The liquid crystal display device according to claim 12 , wherein the substantially same electrical characteristic is at a same threshold voltage for both the first and second thin film transistors.
14. The liquid crystal display device according to claim 12 , wherein the substantially same electrical characteristic is on-current.
15. The liquid crystal display device according to claim 12 , wherein a ratio of a channel width to a channel length of the first thin film transistor satisfies a mathematical formula of (W/L)=(Id/Idp)*(Wp/Lp), where W is a channel width of the first thin film transistor, L is a channel length of the first thin film transistor, Id is an on-current of the first thin film transistor, Idp is an on-current of the second thin film transistor, Wp is a channel width of the second thin film transistor, and Lp is a channel length of the second thin film transistor.
16. The liquid crystal display device according to claim 13 , further comprising a third thin film transistor with a third polysilicon active layer in which a third channel area has third grain boundaries in the first grain boundary direction, wherein the third thin film transistor has a third channel direction different than the first grain boundary direction, wherein the first, second and third transistors have a substantially same electrical characteristic at a same threshold voltage.
17. The liquid crystal display device according to claim 16 , wherein the similar characteristic is on-current.
18. The liquid crystal display device according to claim 16 , wherein the first channel direction is at a right angle with respect to the first grain boundary direction and the third channel direction is at 45° angle with respect to the first grain boundary direction.
19. A liquid crystal display device, comprising:
a first thin film transistor with a first polysilicon active layer in which a first channel area has first grain boundaries, wherein the first thin film transistor has a first channel direction at a first angle from a first grain boundary direction of the first grain boundaries;
a second thin film transistor with a second polysilicon active layer in which a second channel area has second grain boundaries, wherein the second thin film transistor has a second channel direction parallel to a second grain boundary direction of the second grain boundaries; and
a third thin film transistor with a third polysilicon active layer in which a third channel area has third grain boundaries, the third thin film transistor has a third channel direction at second angle from the third grain boundary direction of the third grain boundaries, the second angle is different than the first angle, wherein the first, second and third transistors have a similar on-current at a same threshold voltage.
20. The liquid crystal display device according to claim 19 , wherein the first, second, and third grain boundaries are in a same direction.