Etching tape and method of fabricating array substrate for liquid crystal display using the same

1. A method of fabricating a liquid crystal display array substrate, comprising:

forming a gate wiring line having a gate pad electrode;

forming a data wiring line having a data pad electrode;

forming a protection layer over the gate pad electrode and the data pad electrode; and

positioning etching tapes on the protection layer over the gate pad electrode and the data pad electrode, wherein the etching tape includes a base sheet and a gel type etching material on the base sheet.

2. The method as claimed in claim 1 , further comprising:

etching the protection layer to form contact holes in the protection layer over the gate pad electrode and the data pad electrode.

3. The method as claimed in claim 1 , wherein the base sheet is one of a cellophane film, a polymer resin film, and a steel use stainless film.

4. The method as claimed in claim 1 , wherein the protection layer is formed of SiN x and the etching material is capable of etching SiN x .

5. The method as claimed in claim 4 , wherein the etching material is one of NH 4 HF and KOH.

6. The method as claimed in claim 1 , further comprising:

removing a protection sheet from the etching tapes prior to the positioning the etching tapes.

7. The method as claimed in claim 6 , wherein the protection sheet is one of a polyethylene terephthalate (PET) film, a polyvinylchloride (PVC) film, a polyethylene (PE) film, and a polypropylene (PP) film.

8. A method of fabricating a liquid crystal display array substrate, comprising:

forming a gate electrode, a first electrode of a storage capacitor, and a gate wiring line on a transparent insulating substrate;

forming a gate insulating layer, an active layer, ohmic contact layers, a source electrode, and a drain electrode on the gate electrode;

forming dielectric layers and the second electrode of the storage capacitor on the first electrode of the storage capacitor;

forming a data wiring line;

forming a pixel electrode on the drain electrode and the second electrode of the storage capacitor;

forming a gate pad electrode on the gate wiring line, and forming a data pad electrode on the data wiring line;

forming a protection layer over the gate pad electrode and the data pad electrode; and

etching the protection layer using an etching tape to form contact holes in the protection layer over the gate pad electrode and the data pad electrode, wherein the etching tape includes a base sheet and a gel type etching material on the base sheet.

9. The method as claimed in claim 8 , wherein the base sheet is one of a cellophane film, a polymer resin film, and a steel use stainless film.

10. The method as claimed in claim 8 , wherein the protection layer is formed of SiN x and the etching material is capable of etching SiN x .

11. The method as claimed in claim 10 , wherein the etching material is one of NH 4 HF and KOH.

12. The method as claimed in claim 8 , wherein etching the protection layer includes positioning etching tapes on the protection layer over the gate pad electrode and over the data pad electrode for a period of 1 to 60 minutes to etch the contact holes.