Method of fabricating thin film transistor including organic semiconductor layer and substrate

1. A method of fabricating a display device including a thin film transistor, comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer on the gate electrode;

forming source and drain electrodes on the gate insulating layer;

forming an organic semiconductor pattern contacting the source and drain electrodes in the presence of a magnetic field or an electric field,

wherein an angle of the magnetic field or the electric field with respect to a top surface of the substrate is 90 degrees or a slanted angle, and

wherein a direction of the magnetic field or the electric field is alternated.

2. The method according to claim 1 , wherein forming the organic semiconductor pattern includes evaporating an organic semiconductor material in the presence of the magnetic field or the electric field using a shadow mask.

3. The method according to claim 1 , wherein forming the organic semiconductor pattern includes:

evaporating an organic semiconductor material in the presence of the magnetic field or the electric field;

coating poly-vinyl-alcohol on the evaporated organic semiconductor material;

patterning the coated poly-vinyl-alcohol; and

etching the evaporated organic semiconductor material using the patterned poly-vinyl-alcohol.

4. The method according to claim 1 , wherein the organic semiconductor pattern is formed on the source and drain electrodes.

5. The method according to claim 4 , wherein the organic semiconductor pattern substantially fills the space between the source and drain electrodes and overlaps at least portions of the source and drain electrodes.

6. The method according to claim 1 , wherein the organic semiconductor pattern includes a low molecular weight organic semiconductor material.

7. The method according to claim 1 , wherein the magnetic field has an intensity of about 20 G to 100 G.

8. The method according to claim 1 , wherein the substrate is a flexible type substrate.

9. The method according to claim 1 , wherein the organic semiconductor pattern is formed at a temperature equal to or less than 200 centigrade degrees.

10. The method according to claim 1 , wherein an organic conductive material is formed on the source and drain electrodes.

11. The method according to claim 1 further comprising:

forming a passivation layer on the organic semiconductor pattern, the passivation layer having a drain contact hole exposing the drain electrode; and

forming a pixel electrode on the passivation layer, the pixel electrode contacting the drain electrode through the drain contact hole.

12. A method of fabricating a display device including a thin film transistor, comprising:

forming an organic semiconductor pattern on a substrate in the presence of either a magnetic field or an electric field, wherein an angle of the magnetic field or the electric field with respect to a top surface of the substrate is 90 degrees or a slanted angle;

forming a gate insulating layer on the organic semiconductor pattern;

forming a gate electrode on the gate insulating layer;

forming an interlayer insulating film on the gate electrode, the interlayer insulating film having first and second contact holes exposing both side portions of the organic semiconductor pattern; and

forming source and drain electrodes contacting the both side portions through the first and second contact holes, respectively,

wherein forming the organic semiconductor pattern includes:

coating an organic semiconductor material; and

curing the coated organic semiconductor material in the presence of the magnetic field or the electric field after coating the organic semiconductor material; and

patterning the cured organic semiconductor material,

wherein a direction of the magnetic field or the electric field is alternated.

13. The method according to claim 12 , wherein the magnetic field has an intensity of about 20 G to 100 G.

14. The method according to claim 12 , wherein the organic semiconductor pattern includes a high molecular weight organic semiconductor material.

15. The method according to claim 12 , wherein the substrate is a flexible type substrate.

16. The method according to claim 12 , wherein the organic semiconductor pattern is formed at a temperature equal to or less than 200 centigrade degrees.

17. The method according to claim 12 , wherein an organic conductive material is formed on the source and drain electrodes.

18. The method according to claim 12 further comprising:

forming a passivation layer on the source and drain electrodes, the passivation layer having a drain contact hole exposing the drain electrode; and

forming a pixel electrode on the passivation layer, the pixel electrode contacting the drain electrode through the drain contact hole.