Thin film transistor and method of fabricating the same
View Patent ↗Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.
1. A method of fabricating a thin film transistor, comprising:
preparing a substrate;
forming an amorphous silicon layer on the substrate;
forming a capping layer containing a metal catalyst on the amorphous silicon layer;
patterning the capping layer; and
annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer,
wherein annealing the substrate to crystallize the amorphous silicon layer into the polycrystalline silicon layer comprises:
first annealing the substrate and diffusing or penetrating the metal catalyst in the capping layer pattern to form seeds at an interface between the polycrystalline silicon layer and the capping layer pattern; and
second annealing the substrate to cause the seeds to crystallize the amorphous silicon layer into the polycrystalline silicon layer.
2. The method according to claim 1 , further comprising:
after the crystallization, removing the capping layer;
patterning the polycrystalline silicon layer to form a semiconductor layer; and
forming a gate insulating layer, a gate electrode, an interlayer insulting layer, and source and drain electrodes on the substrate.
3. The method according to claim 1 , wherein forming the capping layer containing the metal catalyst on the amorphous silicon layer includes:
forming a first capping layer on the amorphous silicon layer;
forming a metal catalyst layer on the first capping layer; and
forming a second capping layer on the metal catalyst layer.
4. The method according to claim 1 , wherein forming the capping layer containing the metal catalyst on the amorphous silicon layer includes simultaneously depositing a material for forming the capping layer and the metal catalyst on the amorphous silicon layer to form the capping layer containing the metal catalyst.
5. The method according to claim 4 , wherein the metal catalyst contained in the capping layer has a concentration gradient in which the density of the metal catalyst varies depending on a distance from an interface between the amorphous silicon layer and the capping layer.
6. The method according to claim 1 , wherein forming the capping layer containing the metal catalyst on the amorphous silicon layer includes:
depositing only a material for forming the capping layer during the formation of a first portion of the capping layer containing no metal catalyst, and then simultaneously depositing the capping layer forming material and the metal catalyst to form a second portion of the capping layer.
7. The method according to claim 6 , wherein the metal catalyst contained in the capping layer has a concentration gradient in which the density of the metal catalyst varies depending on a distance from an interface between the amorphous silicon layer and the capping layer.
8. The method according to claim 1 , wherein forming the capping layer containing the metal catalyst on the amorphous silicon layer includes:
forming the capping layer on the amorphous silicon layer; and
implanting the metal catalyst into the capping layer using an ion implantation process.
9. The method according to claim 1 , wherein the first annealing is performed at a temperature ranging from 200 to 800° C.
10. The method according to claim 1 , wherein the second annealing is performed at a temperature ranging from 400 to 1300° C.
11. The method according to claim 1 , wherein the capping layer has a thickness of 5 to 2000 Å.
12. The method according to claim 1 , wherein the metal catalyst includes at least one selected from a group consisting of Ni, Pd, Ti, Ag, Au, Al, Sn, Sb, Cu, Co, Mo, Tr, Ru, Rh, Cd and Pt.
13. The method according to claim 1 , wherein the capping layer patterns have an interval of 3 to 400 μm there between.
14. The method according to claim 1 , wherein the capping layer pattern has a width of 1 to 20 μm.
15. The method according to claim 1 , wherein an amount of the metal catalyst remaining on the polycrystalline silicon layer is 10 9 to 10 13 atoms/cm 2 .
16. The method according to claim 1 , wherein the capping layer comprises silicon oxide or silicon nitride.