Surface acoustic wave device
View Patent ↗A SAW device comprises a single crystal piezo-electric strate (made, for example, of LiTaO 3 or LiNbO 3 ), and an interdigital transducer (IDT) formed of a material mainly containing Al and disposed on the piezo-electric substrate. The piezo-electric strate contains an additive (for example, Fe, Mn, Cu, Ti), and an orientation rotated by an angle in a range of 42° to 48° (more preferably 46°±0.3°) from a Y-axis toward a Z-axis about an X-axis. The IDT presents a normalized thickness h/λ (h: thickness of electrode, and λ: spacing between digits of the IDT) of 7% to 11%. A more appropriate substrate cut angle can be shown for the SAW device which employs a piezo-electric substrate containing an additive, to improve the electric characteristics thereof.
1. A surface acoustic wave device comprising:
a single crystal piezo-electric substrate; and
an interdigital transducer formed of a material mainly containing aluminum and disposed on a surface of said piezo-electric substrate,
wherein said single crystal piezo-electric substrate contains an additive, and has an orientation rotated by an angle in a range of 42° to 48° from a Y-axis to a Z-axis about an X-axis,
said piezo-electric substrate is a lithium tantalate substrate or a lithium niobate substrate, and
said additive comprising iron, added at a weight percentage of 1.24 wt. % or less,
said interdigital transducer presents a normalized thickness h/λ in a range of 7 to 11 %, said normalized thickness being derived by normalizing a thickness h of said interdigital transducer with a spacing λ between digits of said interdigital transducer.
2. A surface acoustic wave device according to claim 1 , wherein:
said single crystal piezo-electric substrate has an orientation rotated by an angle in a range of 46°±0.3° from the Y-axis to the Z-axis about the X-axis.
3. A surface acoustic wave device according to claim 2 , wherein:
said normalized thickness h/λ is approximately 9%.
4. Surface acoustic wave device according to claim 3 , wherein said single crystal piezo-electric substrate exhibits a volume resistivity in a range of 3.6×10 10 to 1.5×10 14 Ω·cm.
5. A surface acoustic wave device according to claim 2 , wherein said single crystal piezo-electric substrate exhibits a volume resistivity in a range of 3.6×10 10 to 1.5×10 14 Ω·cm.
6. A surface acoustic wave device according to claim 1 , wherein:
said normalized thickness h/λ is approximately 9%.
7. A surface acoustic wave device according to claim 6 , wherein said single crystal piezo-electric substrate exhibits a volume resistivity in a range of 3.6×10 10 to 1.5×10 14 Ω·cm.
8. A surface acoustic wave device according to claim 1 , wherein said single crystal piezo-electric substrate exhibits a volume resistivity in a range of 3.6×10 10 to 1.5×10 14 Ω·cm.